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GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Journal article
Applied Physics Letters, 1997,Volume: 71,Issue: 1,Page: 78-80
作者:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Li J.;  Horton T.;  Curtis A.P.;  Hsieh K.C.;  Chuang S.L.;  Chen H.;  Feng M.;  Stillman G.E.;  Li L.;  Liu H.C.;  Bandara K.M.S.V.;  Gunapala S.D.;  Wang W.I.
收藏  |  浏览/下载:0/0  |  提交时间:2019/04/08
Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing Journal article
Applied Physics Letters, 1997,Volume: 70,Issue: 26,Page: 3573-3575
作者:  Sengupta D.K.;  Horton T.;  Fang W.;  Curtis A.;  Li J.;  Chuang S.L.;  Chen H.;  Feng M.;  Stillman G.E.;  Kar A.;  Mazumder J.;  Li L.;  Liu H.C.
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Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy Conference paper
Materials Research Society Symposium - Proceedings
作者:  Kuo H.C.;  Thomas S.;  Curtis A.P.;  Stillman G.E.;  Lin C.H.;  Chen H.
收藏  |  浏览/下载:2/0  |  提交时间:2019/04/08
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
作者:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.;  Stillman G.E.
收藏  |  浏览/下载:2/0  |  提交时间:2019/04/08
AlInP/GaAs  Band offset  GaInP/GaAs  Gas source molecular beam epitaxy (GSMBE)  Photoluminescence (PL)  Photoluminescence excitation (PLE)  Three-band Kane  
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
作者:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.;  Stillman G.E.
收藏  |  浏览/下载:0/0  |  提交时间:2019/04/08
AlInP/GaAs  Band offset  GaInP/GaAs  Gas source molecular beam epitaxy (GSMBE)  Photoluminescence (PL)  Photoluminescence excitation (PLE)  Three-band Kane  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 12,Page: 1382-1388
作者:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.;  Horton T.U.;  Kuo H.C.;  Moy A.;  Miller J.;  Hsieh K.C.;  Cheng K.Y.;  Chen H.;  Adesida I.;  Chuang S.L.;  Feng M.;  Stillman G.E.;  Wu W.;  Tucker J.;  Chang Y.C.;  Li L.;  Liu H.C.
收藏  |  浏览/下载:0/0  |  提交时间:2019/04/08
Gas source molecular beam epitaxy (MBE)  InGaAs/InP  Quantum well infrared photodetectors QWIPs  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
作者:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
收藏  |  浏览/下载:0/0  |  提交时间:2019/04/08
Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
作者:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/08
Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift  
Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD Conference paper
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
作者:  Yang Q.;  Hartmann Q.J.;  Curtis A.P.;  Lin C.;  Ahmari D.A.;  Scott D.;  Kuo H.C.;  Chen H.;  Stillman G.E.
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/08
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 12,Page: 1376-1381
作者:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.;  Horton T.U.;  Hartman Q.;  Kuo H.C.;  Thomas S.;  Miller J.;  Hsieh K.C.;  Adesida I.;  Chuang S.L.;  Feng M.;  Stillman G.E.;  Chang Y.C.;  Wu W.;  Tucker J.;  Chen H.;  Gibson J.M.;  Mazumder J.;  Li L.;  Liu H.C.
收藏  |  浏览/下载:3/0  |  提交时间:2019/04/08
Gas source molecular beam epitaxy (GSMBE)  InP/inGaAs  Quantum-well infrared photodectors (QWIPs)