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An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991,Volume: 9,Issue: 4,Page: 1924-1929
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.;  Smith D.J.;  Choyke W.J.;  Morkoc H.
Favorite  |  View/Download:0/0  |  Submit date:2019/04/08
Cathodoluminescence  Crystal structure  Energy gap  Films  Gallium arsenides  Gallium nitrides  Layers  Medium temperature  Molecular beam epitaxy  Optical properties  Transmission electron microscopy  X-Ray diffraction  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991,Volume: 9,Issue: 4,Page: 1924-1929
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.;  Smith D.J.;  Choyke W.J.;  Morkoc H.
Favorite  |  View/Download:0/0  |  Submit date:2019/04/08
Cathodoluminescence  Crystal structure  Energy gap  Films  Gallium arsenides  Gallium nitrides  Layers  Medium temperature  Molecular beam epitaxy  Optical properties  Transmission electron microscopy  X-Ray diffraction