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Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.;  Stillman G.E.
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AlInP/GaAs  Band offset  GaInP/GaAs  Gas source molecular beam epitaxy (GSMBE)  Photoluminescence (PL)  Photoluminescence excitation (PLE)  Three-band Kane  
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.;  Stillman G.E.
Favorite  |  View/Download:0/0  |  Submit date:2019/04/08
AlInP/GaAs  Band offset  GaInP/GaAs  Gas source molecular beam epitaxy (GSMBE)  Photoluminescence (PL)  Photoluminescence excitation (PLE)  Three-band Kane  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
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Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
Favorite  |  View/Download:1/0  |  Submit date:2019/04/08
Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 12,Page: 1376-1381
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.;  Horton T.U.;  Hartman Q.;  Kuo H.C.;  Thomas S.;  Miller J.;  Hsieh K.C.;  Adesida I.;  Chuang S.L.;  Feng M.;  Stillman G.E.;  Chang Y.C.;  Wu W.;  Tucker J.;  Chen H.;  Gibson J.M.;  Mazumder J.;  Li L.;  Liu H.C.
Favorite  |  View/Download:4/0  |  Submit date:2019/04/08
Gas source molecular beam epitaxy (GSMBE)  InP/inGaAs  Quantum-well infrared photodectors (QWIPs)  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 12,Page: 1376-1381
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.;  Horton T.U.;  Hartman Q.;  Kuo H.C.;  Thomas S.;  Miller J.;  Hsieh K.C.;  Adesida I.;  Chuang S.L.;  Feng M.;  Stillman G.E.;  Chang Y.C.;  Wu W.;  Tucker J.;  Chen H.;  Gibson J.M.;  Mazumder J.;  Li L.;  Liu H.C.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
Gas source molecular beam epitaxy (GSMBE)  InP/inGaAs  Quantum-well infrared photodectors (QWIPs)