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Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1998,Volume: 16,Issue: 3,Page: 1377-1380
Authors:  Kuo H.C.;  Thomas S.;  Norton T.U.;  Moser B.G.;  Stillman G.E.;  Lin C.H.;  Chen H.
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