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Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy Journal article
ELECTRONICS LETTERS, 2018,Volume: 54,Issue: 22,Page: 1270-1271
Authors:  Sun, Dapeng;  Zhang, Tan-Tan;  Law, Man-Kay;  Mak, Pui-In;  Martins, Rui Paulo
Favorite  |  View/Download:3/0  |  Submit date:2019/01/17
resistors  calibration  CMOS integrated circuits  bipolar transistors  temperature sensors  first-batch-only calibration parameters  batch-to-batch inaccuracy  piecewise BJT process  compensation property  base recombination current  base-emitter voltage  CMOS temperature sensor  process compensated BJT  intra-die variation  spread compensation property  on-chip resistors  inter-die variation  current 3  0 muA  voltage 1  2 V  temperature-40 degC to 125 degC  size 0  036 mm