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Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths Journal article
ACS Photonics, 2017,Volume: 4,Issue: 3,Page: 695-702
Authors:  Deshpande S.;  Bhattacharya I.;  Malheiros-Silveira G.;  Ng K.W.;  Schuster F.;  Mantei W.;  Cook K.;  Chang-Hasnain C.
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III−V  InP  LEDs  MOCVD growth  nanowire laser  nanowire/nanopillar  photonic integrated circuit  quantum-well  silicon photonics  
High brightness formamidinium lead bromide perovskite nanocrystal light emitting devices Journal article
Scientific Reports, 2016,Volume: 6
Authors:  Perumal A.;  Shendre S.;  Li M.;  Tay Y.K.E.;  Sharma V.K.;  Chen S.;  Wei Z.;  Liu Q.;  Gao Y.;  Buenconsejo P.J.S.;  Tan S.T.;  Gan C.L.;  Xiong Q.;  Sum T.C.;  Demir H.V.
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Exploring the Limiting Open-Circuit Voltage and the Voltage Loss Mechanism in Planar CH 3 NH 3 PbBr 3 Perovskite Solar Cells Journal article
Advanced Energy Materials, 2016,Volume: 6,Issue: 18
Authors:  Chen S.;  Hou Y.;  Chen H.;  Richter M.;  Guo F.;  Kahmann S.;  Tang X.;  Stubhan T.;  Zhang H.;  Li N.;  Gasparini N.;  Quiroz C.O.R.;  Khanzada L.S.;  Matt G.J.;  Osvet A.;  Brabec C.J.
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CH 3 NH 3 PbBr 3 solar cells  interface materials based losses  nonradiative recombination losses  open-circuit voltage  
High-Efficiency Light-Emitting Diodes of Organometal Halide Perovskite Amorphous Nanoparticles Journal article
ACS Nano, 2016,Volume: 10,Issue: 7,Page: 6623-6630
Authors:  Xing J.;  Yan F.;  Zhao Y.;  Chen S.;  Yu H.;  Zhang Q.;  Zeng R.;  Demir H.V.;  Sun X.;  Huan A.;  Xiong Q.
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electroluminescence  light-emitting diodes  nanoparticles  organometal halide perovskite  photoluminescence  
Color-Tunable and Highly Luminous N3--DopedBa2-xCaxSiO4-δN2/3δ:Eu2+ (0.0≤ x≤1.0) Phosphors for White NUV-LED Journal article
ACS Applied Materials and Interfaces, 2016,Volume: 8,Issue: 27,Page: 17371-17381
Authors:  Kim D.;  Bae J.-S.;  Hong T.E.;  Hui K.N.;  Kim S.;  Kim C.H.;  Park J.-C.
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Ba2SiO4:Eu2+  Ca substitution  color-tunable  highly luminous PL and EL  N3--ion doping  
Enhanced Exciton Binding Energy of ZnO by Long-Distance Perturbation of Doped Be Atoms Journal article
Journal of Physical Chemistry Letters, 2016,Volume: 7,Issue: 8,Page: 1484-1489
Authors:  Su Y.Q.;  Zhu Y.;  Yong D.;  Chen M.;  Su L.;  Chen A.;  Wu Y.;  Pan B.;  Tang Z.
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Enhancement of the photoluminescence properties of Ba1.98SiO4−δN2/3δ:Eu0.02 phosphors and their application to green LEDs Journal article
Journal of Materials Science: Materials in Electronics, 2016,Volume: 27,Issue: 3,Page: 2809-2815
Authors:  Wang S.;  Hui K.S.;  Hui K.N.;  Sambasivam S.;  Zhang X.L.;  Cho Y.R.;  Kim I.-H.;  Lee W.-J.;  Kyhm K.;  Park J.-C.
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Towards the design of efficient quantum dot light-emitting diodes by controlling the exciton lifetime Journal article
Optics Express, 2015,Volume: 23,Issue: 25,Page: 32413-32419
Authors:  Ji W.;  Zeng Q.;  Jing P.;  Jiang M.-M.;  Qu S.;  Li D.;  Wang J.;  Shan C.-X.
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Intense electroluminescence from ZnO nanowires Journal article
Journal of Materials Chemistry C, 2015,Volume: 3,Issue: 20,Page: 5292-5296
Authors:  Yang X.;  Shan C.-X.;  Jiang M.-M.;  Qin J.-M.;  Hu G.-C.;  Wang S.-P.;  Ma H.-A.;  Jia X.-P.;  Shen D.-Z.
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The work mechanism and sub-bandgap-voltage electroluminescence in inverted quantum dot light-emitting diodes Journal article
Scientific Reports, 2014,Volume: 4
Authors:  Ji W.;  Jing P.;  Zhang L.;  Li D.;  Zeng Q.;  Qu S.;  Zhao J.
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