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Conduction band discontinuity and carrier multiplication at the MgxZn1-xO/MgyZn1-yO interface Journal article
RSC Advances, 2016,Volume: 6,Issue: 41,Page: 34955-34958
Authors:  Xie X.;  Li B.;  Zhang Z.;  Wang S.;  Shen D.
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ZnO-based ultraviolet avalanche photodetectors Journal article
Journal of Physics D: Applied Physics, 2013,Volume: 46,Issue: 30
Authors:  Yu J.;  Shan C.X.;  Huang X.M.;  Zhang X.W.;  Wang S.P.;  Shen D.Z.
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Ultraviolet emissions realized in ZnO via an avalanche multiplication process Journal article
Chinese Physics B, 2013,Volume: 22,Issue: 7
Authors:  Yu J.;  Shan C.-X.;  Shen H.;  Zhang X.-W.;  Wang S.-P.;  Shen D.-Z.
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avalanche multiplication  light-emitting devices  wide bandgap semiconductor  
Enhanced responsivity of photodetectors realized via impact ionization Journal article
Sensors, 2012,Volume: 12,Issue: 2,Page: 1280-1287
Authors:  Yu J.;  Shan C.-X.;  Qiao Q.;  Xie X.-H.;  Wang S.-P.;  Zhang Z.-Z.;  Shen D.-Z.
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Impact ionization  Photodetector  Responsivity  
Enhanced responsivity of highly spectrum-selective ultraviolet photodetectors Journal article
Journal of Physical Chemistry C, 2012,Volume: 116,Issue: 1,Page: 1350-1353
Authors:  Ni P.-N.;  Shan C.-X.;  Wang S.-P.;  Li B.-H.;  Zhang Z.-Z.;  Zhao D.-X.;  Liu L.;  Shen D.-Z.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08