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An in situ observation of the growth kinetics and stress relaxation Pd 2Si thin films on Si(111) Journal article
Journal of Applied Physics, 1990,Volume: 67,Issue: 8,Page: 3689-3692
Authors:  White G.E.;  Chen H.
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An in situ observation of the growth kinetics and stress relaxation Pd 2Si thin films on Si(111) Journal article
Journal of Applied Physics, 1990,Volume: 67,Issue: 8,Page: 3689-3692
Authors:  White G.E.;  Chen H.
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Kinetics of Pd2Si layer growth measured by an x-ray diffraction technique Journal article
Journal of Applied Physics, 1986,Volume: 59,Issue: 10,Page: 3467-3474
Authors:  Coulman B.;  Chen H.
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Kinetics of Pd2Si layer growth measured by an x-ray diffraction technique Journal article
Journal of Applied Physics, 1986,Volume: 59,Issue: 10,Page: 3467-3474
Authors:  Coulman B.;  Chen H.
Favorite  |  View/Download:1/0  |  Submit date:2019/04/08