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Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film Journal article
ACS Applied Materials and Interfaces, 2016,Volume: 8,Issue: 48,Page: 32971-32977
Authors:  Fan L.;  Chen Y.;  Liu Q.;  Chen S.;  Zhu L.;  Meng Q.;  Wang B.;  Zhang Q.;  Ren H.;  Zou C.
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infrared transmission  memory device  n-GaN  phase transition modulation  vanadium dioxide