UM

Browse/Search Results:  1-6 of 6 Help

Selected(0)Clear Items/Page:    Sort:
Controlled compensation via non-equilibrium electrons in ZnO Journal article
SCIENTIFIC REPORTS, 2018,Volume: 8
Authors:  Xie, Xiuhua;  Li, Binghui;  Zhang, Zhenzhong;  Wang, Shuangpeng;  Shen, Dezhen
Favorite  |  View/Download:9/0  |  Submit date:2019/01/17
Low-Threshold Whispering-Gallery Mode Upconversion Lasing via Simultaneous Six-Photon Absorption Journal article
ADVANCED OPTICAL MATERIALS, 2018,Volume: 6,Issue: 17
Authors:  Chen, Anqi;  Zhu, Hai;  Wu, Yanyan;  Yang, Decheng;  Li, Jinyu;  Yu, Siufung;  Chen, Zhiyang;  Ren, Yuhao;  Gui, Xuchun;  Wang, Shuangpeng;  Tang, Zikang
Favorite  |  View/Download:18/0  |  Submit date:2018/10/30
lasing  microcavities  multiphoton absorption  upconversion  
Bandgap engineering of oxygen-rich TiO2+x for photocatalyst with enhanced visible-light photocatalytic ability Journal article
Journal of Materials Science, 2015,Volume: 50,Issue: 12,Page: 4324-4329
Authors:  Pan H.
Favorite  |  View/Download:3/0  |  Submit date:2019/04/08
ZnO-based matierial, heterojunction and photoelctronic device Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 1,Page: 1-60
Authors:  Shen D.-Z.;  Mei Z.-X.;  Liang H.-L.;  Du X.-L.;  Ye J.-D.;  Gu S.-L.;  Wu Y.-X.;  Xu C.-X.;  Zhu G.-Y.;  Dai J.;  Chen M.-M.;  Ji X.;  Tang Z.-K.;  Shan C.-X.;  Zhang B.-L.;  Du G.-T.;  Zhang Z.-Z.
Favorite  |  View/Download:10/0  |  Submit date:2019/04/08
MgZnO  Molecular beam epitaxy  Surface/interface engineering  Ultraviolet photodetector  ZnO  
Wide range bandgap modulation based on ZnO-based alloys and fabrication of solar blind UV detectors with high rejection ratio Journal article
ACS Applied Materials and Interfaces, 2014,Volume: 6,Issue: 16,Page: 14152-14158
Authors:  Su L.;  Zhu Y.;  Yong D.;  Chen M.;  Ji X.;  Su Y.;  Gui X.;  Pan B.;  Xiang R.;  Tang Z.
Favorite  |  View/Download:3/0  |  Submit date:2019/04/08
bandgap modulation  high rejection ratio  solar blind detector  stability  
Ultraviolet emissions realized in ZnO via an avalanche multiplication process Journal article
Chinese Physics B, 2013,Volume: 22,Issue: 7
Authors:  Yu J.;  Shan C.-X.;  Shen H.;  Zhang X.-W.;  Wang S.-P.;  Shen D.-Z.
Favorite  |  View/Download:3/0  |  Submit date:2019/04/08
avalanche multiplication  light-emitting devices  wide bandgap semiconductor