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Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths Journal article
Optica, 2017,Volume: 4,Issue: 7,Page: 717-723
Authors:  Lu F.;  Bhattacharya I.;  Sun H.;  Tran T.-T.D.;  Ng K.W.;  Malheiros-Silveira G.N.;  Chang-Hasnain C.
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Integrated optics devices  Quantum-well, -wire and -dot devices  Semiconductor lasers  Subwavelength structures, nanostructures  Vertical emitting lasers  
Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths Journal article
ACS Photonics, 2017,Volume: 4,Issue: 3,Page: 695-702
Authors:  Deshpande S.;  Bhattacharya I.;  Malheiros-Silveira G.;  Ng K.W.;  Schuster F.;  Mantei W.;  Cook K.;  Chang-Hasnain C.
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III−V  InP  LEDs  MOCVD growth  nanowire laser  nanowire/nanopillar  photonic integrated circuit  quantum-well  silicon photonics  
Room-temperature InGaAs/InP quantum-well-in-nanopillar laser directly grown on silicon Conference paper
2016 Conference on Lasers and Electro-Optics, CLEO 2016
Authors:  Bhattacharya I.;  Lu F.;  Malheiros-Silveira G.N.;  Deshpande S.;  Ng K.W.;  Chang-Hasnain C.
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Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon Journal article
Scientific Reports, 2016,Volume: 6
Authors:  Ko W.S.;  Bhattacharya I.;  Tran T.-T.D.;  Ng K.W.;  Adair Gerke S.;  Chang-Hasnain C.
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Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon Journal article
ACS Applied Materials and Interfaces, 2014,Volume: 6,Issue: 19,Page: 16706-16711
Authors:  Ng K.W.;  Ko W.S.;  Chen R.;  Lu F.;  Tran T.-T.D.;  Li K.;  Chang-Hasnain C.J.
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alloy ordering  core-shell  III-V nanopillar  laser  nanowire  
Nanopillar lasers directly grown on silicon with heterostructure surface passivation Journal article
ACS Nano, 2014,Volume: 8,Issue: 7,Page: 6833-6839
Authors:  Sun H.;  Ren F.;  Ng K.W.;  Tran T.-T.D.;  Li K.;  Chang-Hasnain C.J.
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core-shell  III-V compound on Si  lasers  nanopillars  nanowires  surface passivation  
Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit Journal article
Nano Letters, 2013,Volume: 13,Issue: 12,Page: 5931-5937
Authors:  Ng K.W.;  Tran T.-T.D.;  Ko W.S.;  Chen R.;  Lu F.;  Chang-Hasnain C.J.
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GaAs nanopillar  GaAs nanowire  nanolaser  poly-Si  silicon  
Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
ACS Nano, 2013,Volume: 7,Issue: 1,Page: 100-107
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.;  Lu F.;  Dubrovskii V.G.;  Kamp M.;  Forchel A.;  Chang-Hasnain C.J.
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critical thickness  III-V on Si  laser  nanoneedle  nanopillar  nanowire  transmission electron microscopy  
High-speed avalanche photodiodes using III-V nanopillars monolithically grown on silicon Conference paper
IEEE International Conference on Group IV Photonics GFP
Authors:  Chen R.;  Parekh D.;  Ng K.W.;  Chang-Hasnain C.
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Avalanche photodiode  III-V on silicon  nanostructure  
Nanolasers grown on silicon-based MOSFETs Journal article
Optics Express, 2012,Volume: 20,Issue: 11,Page: 12171-12176
Authors:  Lu F.;  Tran T.-T.D.;  Ko W.S.;  Ng K.W.;  Chen R.;  Chang-Hasnain C.
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