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Dielectric properties of undoped and Li-doped Pb(Fe1/2Nb1/2)O3 ceramics sintered from mechanochemically synthesized powders Journal article
Ferroelectrics, 2015,Volume: 475,Issue: 1,Page: 61-67
Authors:  Gusev A.A.;  Raevski I.P.;  Avvakumov E.G.;  Isupov V.P.;  Raevskaya S.I.;  Chen H.;  Titov V.V.;  Chou C.-C.;  Kubrin S.P.;  Titov S.V.;  Malitskaya M.A.
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ferroelectric  Lead iron niobate  mechanochemical synthesis  phase transition  
Phase stability and pyroelectricity of antiferroelectric PLZST oxide Journal article
Journal of Electroceramics, 2008,Volume: 21,Issue: 1-4 SPEC. ISS.,Page: 145-148
Authors:  Chan W.-H.;  Xu Z.;  Zhai J.;  Colla E.V.;  Chen H.
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Antiferroelectric  Frequency dispersion  PLZST ceramics  Pyroelectric properties  Tunability  
Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films Journal article
Journal of Applied Physics, 2004,Volume: 96,Issue: 1,Page: 569-574
Authors:  Yao Y.;  Lu S.G.;  Chen H.;  Zhai J.;  Wong K.H.
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Non-polar nano-regions in Pb(Zn1/3Nb2/3)O3-PbTiO3-BaTiO3 ceramics Conference paper
Materials Chemistry and Physics
Authors:  Wang X.;  Chen H.
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BaTiO3  Dielectric dispersion  Nano-regions  Pb(Zn1/3Nb2/3)O3  PbTiO3  Transition temperature  
Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method Journal article
Tamkang Journal of Science and Engineering, 2002,Volume: 5,Issue: 1,Page: 1-6
Authors:  Lin C.-H.;  Friddle P.A.;  Ma C.-H.;  Chen H.
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Dielectric Properties  MOCVD  PSTT Relaxor Ferroelectric  Thin Films  
Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD Conference paper
Ferroelectrics
Authors:  Lin C.H.;  Friddle P.A.;  Ma C.H.;  Chen H.
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composition  dielectric dispersion  growth temperature  Relaxor  
Effects of B-site ordering/disordering in lead scandium niobate Journal article
Journal of Physics Condensed Matter, 1999,Volume: 11,Issue: 42,Page: 8301-8312
Authors:  Takesue N.;  Fujii Y.;  Ichihara M.;  Chen H.;  Tatemori S.;  Hatano J.
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