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Enhancing ultraviolet photoresponsivity of an oversized Sn-doped ZnO microwire based photodetector Journal article
Journal of Materials Science: Materials in Electronics, 2019,Volume: 30,Issue: 1,Page: 518-524
Authors:  Sun X.;  Azad F.;  Wang S.;  Zhao L.;  Su S.
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Low-Cost Flexible ZnO Microwires Array Ultraviolet Photodetector Embedded in PAVL Substrate Journal article
NANOSCALE RESEARCH LETTERS, 2018,Volume: 13
Authors:  Sun, Xinyu;  Azad, Fahad;  Wang, Shuangpeng;  Zhao, Lingzhi;  Su, Shichen
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ZnO microwire array  Ultraviolet photodetector  
Back-to-back symmetric Schottky type UVA photodetector based on ternary alloy BeZnO Journal article
JOURNAL OF MATERIALS CHEMISTRY C, 2018,Volume: 6,Issue: 29,Page: 7776-7782
Authors:  Su, Longxing;  Zhu, Yuan;  Xu, Xiaojie;  Chen, Hongyu;  Tang, Zikang;  Fang, Xiaosheng
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Conduction band discontinuity and carrier multiplication at the MgxZn1-xO/MgyZn1-yO interface Journal article
RSC Advances, 2016,Volume: 6,Issue: 41,Page: 34955-34958
Authors:  Xie X.;  Li B.;  Zhang Z.;  Wang S.;  Shen D.
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Highly sensitive ultraviolet photodetectors fabricated from ZnO quantum dots/carbon nanodots hybrid films Journal article
Scientific Reports, 2014,Volume: 4
Authors:  Guo D.-Y.;  Shan C.-X.;  Qu S.-N.;  Shen D.-Z.
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High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction Journal article
Applied Physics Letters, 2014,Volume: 105,Issue: 7
Authors:  Su L.;  Zhang Q.;  Wu T.;  Chen M.;  Su Y.;  Zhu Y.;  Xiang R.;  Gui X.;  Tang Z.
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ZnO-based matierial, heterojunction and photoelctronic device Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 1,Page: 1-60
Authors:  Shen D.-Z.;  Mei Z.-X.;  Liang H.-L.;  Du X.-L.;  Ye J.-D.;  Gu S.-L.;  Wu Y.-X.;  Xu C.-X.;  Zhu G.-Y.;  Dai J.;  Chen M.-M.;  Ji X.;  Tang Z.-K.;  Shan C.-X.;  Zhang B.-L.;  Du G.-T.;  Zhang Z.-Z.
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MgZnO  Molecular beam epitaxy  Surface/interface engineering  Ultraviolet photodetector  ZnO  
Cubic MgZnO deep-ultraviolet photodetector with high responsivity Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 11,Page: 1291-1296
Authors:  Zheng J.;  Qiao Q.;  Zhang Z.-Z.;  Wang L.-K.;  Han S.;  Zhang J.-Y.;  Liu Y.-C.;  Wang S.-P.;  Chen X.;  Jiang M.-M.;  Li B.-H.;  Zhao D.-X.;  Liu L.;  Liu K.-W.;  Shan C.-X.;  Shen D.-Z.
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Cubic MgZnO  Deep-ultraviolet photodetector  Photoconductive gain  
Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer Journal article
Applied Physics Letters, 2013,Volume: 102,Issue: 23
Authors:  Xie X.H.;  Zhang Z.Z.;  Li B.H.;  Wang S.P.;  Jiang M.M.;  Shan C.X.;  Zhao D.X.;  Chen H.Y.;  Shen D.Z.
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Enhanced responsivity of photodetectors realized via impact ionization Journal article
Sensors, 2012,Volume: 12,Issue: 2,Page: 1280-1287
Authors:  Yu J.;  Shan C.-X.;  Qiao Q.;  Xie X.-H.;  Wang S.-P.;  Zhang Z.-Z.;  Shen D.-Z.
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Impact ionization  Photodetector  Responsivity