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Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy Conference paper
Materials Research Society Symposium - Proceedings
Authors:  Kuo H.C.;  Thomas S.;  Curtis A.P.;  Stillman G.E.;  Lin C.H.;  Chen H.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.;  Stillman G.E.
Favorite  |  View/Download:2/0  |  Submit date:2019/04/08
AlInP/GaAs  Band offset  GaInP/GaAs  Gas source molecular beam epitaxy (GSMBE)  Photoluminescence (PL)  Photoluminescence excitation (PLE)  Three-band Kane  
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.;  Stillman G.E.
Favorite  |  View/Download:0/0  |  Submit date:2019/04/08
AlInP/GaAs  Band offset  GaInP/GaAs  Gas source molecular beam epitaxy (GSMBE)  Photoluminescence (PL)  Photoluminescence excitation (PLE)  Three-band Kane