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Deuterium-oxygen exchange on diamond (100)-A study by ERDA, RBS and TOF-SIMS Journal article
Diamond and Related Materials, 2002,Volume: 11,Issue: 7,Page: 1385-1390
Authors:  Loh K.P.;  Xie X.N.;  Zhang X.;  Teo E.J.;  Osipowicz T.;  Lai M.Y.;  Yakovlev N.
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Atomic oxygen  Deuterium  Rutherford backscattering  Time-of-flight secondary ion mass spectrometry  
Growth and characterization of Y 2 O 3 :Eu on Si and yttria-stabilized zirconia Journal article
Journal of Applied Physics, 2001,Volume: 90,Issue: 12,Page: 6110-6113
Authors:  Joo Rhee S.;  White J.O.;  Lee S.;  Chen H.
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Kinetics of Pd2Si layer growth measured by an x-ray diffraction technique Journal article
Journal of Applied Physics, 1986,Volume: 59,Issue: 10,Page: 3467-3474
Authors:  Coulman B.;  Chen H.
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Kinetics of Pd2Si layer growth measured by an x-ray diffraction technique Journal article
Journal of Applied Physics, 1986,Volume: 59,Issue: 10,Page: 3467-3474
Authors:  Coulman B.;  Chen H.
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Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry Journal article
Journal of Applied Physics, 1985,Volume: 57,Issue: 2,Page: 643-645
Authors:  Coulman B.;  Chen H.;  Rehn L.E.
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Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry Journal article
Journal of Applied Physics, 1985,Volume: 57,Issue: 2,Page: 643-645
Authors:  Coulman B.;  Chen H.;  Rehn L.E.
Favorite  |  View/Download:1/0  |  Submit date:2019/04/08