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Controlled compensation via non-equilibrium electrons in ZnO Journal article
SCIENTIFIC REPORTS, 2018,Volume: 8
Authors:  Xie, Xiuhua;  Li, Binghui;  Zhang, Zhenzhong;  Wang, Shuangpeng;  Shen, Dezhen
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Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices Journal article
Advanced Functional Materials, 2016,Volume: 26,Issue: 21,Page: 3696-3702
Authors:  Chen A.;  Zhu H.;  Wu Y.;  Chen M.;  Zhu Y.;  Gui X.;  Tang Z.
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p-type doping  UV light-emitting diodes  ZnO  
Comparative study on beryllium and magnesium as a co-doping element for ZnO:N Journal article
Chinese Physics B, 2016,Volume: 25,Issue: 6
Authors:  Su Y.-Q.;  Chen M.-M.;  Su L.-X.;  Zhu Y.;  Tang Z.-K.
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defects and impurities  III-V and II-VI semiconductors  photoluminescence  properties and materials  x-ray photoelectron  
Optical investigations of Be doped ZnO films grown by molecular beam epitaxy Journal article
Materials Research Bulletin, 2016,Volume: 78,Page: 16-19
Authors:  Chen M.;  Zhu Y.;  Chen A.;  Shen Z.;  Tang Z.
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Luminescence  Optical properties  Oxides  Semiconductors  Thin films  
H-stabilized shallow acceptors in N-doped ZnO Journal article
Physical Review B - Condensed Matter and Materials Physics, 2015,Volume: 92,Issue: 23
Authors:  Yong D.Y.;  He H.Y.;  Tang Z.K.;  Wei S.-H.;  Pan B.C.
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Synthesis and characterization of ZnO/Ag-Doped ZnO core-shell nanowires Journal article
Nanoscience and Nanotechnology Letters, 2015,Volume: 7,Issue: 8,Page: 643-647
Authors:  Fang X.;  Wang X.Y.;  Tang J.;  Fang F.;  Lu S.;  Wang X.;  Wang S.;  Zhao H.;  Fang D.;  Li J.;  Chu X.;  Wang F.;  Wang X.;  Wei Z.
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Ag-doped ZnO  Atom layer deposition  Core-shell nanowires  P type doping  
Intense electroluminescence from ZnO nanowires Journal article
Journal of Materials Chemistry C, 2015,Volume: 3,Issue: 20,Page: 5292-5296
Authors:  Yang X.;  Shan C.-X.;  Jiang M.-M.;  Qin J.-M.;  Hu G.-C.;  Wang S.-P.;  Ma H.-A.;  Jia X.-P.;  Shen D.-Z.
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Optical properties investigation of p-type ZnO film based on doping by diffusion Journal article
Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, 2015,Volume: 35,Issue: 7,Page: 1787-1790
Authors:  Chen F.;  Fang D.;  Wang S.-P.;  Fang X.;  Tang J.-L.;  Zhao H.-F.;  Fang F.;  Chu X.-Y.;  Li J.-H.;  Wang F.;  Wang X.-H.;  Liu G.-J.;  Ma X.-H.;  Wei Z.-P.
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Atomic layer deposition (ALD)  Diffuse doped  P-type ZnO  Phosphorus-doped  Photoluminescence  
ZnO-based matierial, heterojunction and photoelctronic device Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 1,Page: 1-60
Authors:  Shen D.-Z.;  Mei Z.-X.;  Liang H.-L.;  Du X.-L.;  Ye J.-D.;  Gu S.-L.;  Wu Y.-X.;  Xu C.-X.;  Zhu G.-Y.;  Dai J.;  Chen M.-M.;  Ji X.;  Tang Z.-K.;  Shan C.-X.;  Zhang B.-L.;  Du G.-T.;  Zhang Z.-Z.
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MgZnO  Molecular beam epitaxy  Surface/interface engineering  Ultraviolet photodetector  ZnO  
Effect of boron on nitrogen doped p-type ZnO thin films Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 7,Page: 795-799
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Liu L.;  Shen D.-Z.
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B/N codoped  Stable p-type conduction  ZnO