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Progress on preparation of InAs nanowires by molecular beam epitaxy Conference paper
Materials Science Forum
Authors:  Li R.-X.;  Tang J.-L.;  Fang D.;  Wang S.-P.;  Zhao H.-F.;  Fang X.;  Wei Z.-P.;  Jia H.-M.;  Wang X.-H.;  Ma X.-H.
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Applications  Growth  InAs nanowires  MBE  
Controllable growth of high quality ZnO thin film on C-sapphire Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2015,Volume: 36,Issue: 10,Page: 1171-1177
Authors:  Zhang Q.-L.;  Su L.-X.;  Wu T.-Z.;  Wang Y.-C.;  Zhu Y.;  Chen M.-M.;  Gui X.-C.;  Tang Z.-K.
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Buffer  Defects  High quality thin film  Stress  ZnO  
Smooth surface morphology of ZnO thin films on sapphire at low temperature Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 5,Page: 542-547
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Zhao H.-F.;  Liu L.;  Shen D.-Z.
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Growth temperature  Molecular beam epitaxy  Smooth growth  ZnO  
Comparative study of polar and non-polar BeZnO films grown by plasma-assisted molecular beam epitaxy Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 11,Page: 1483-1488
Authors:  Wang Y.-C.;  Wu T.-Z.;  Chen M.-M.;  Su L.-X.;  Zhang Q.-L.;  Tang Z.-K.
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BeZnO  Crystal orientation  Molecular beam epitaxy  Photoluminescence  Sapphire  
Study of MgZnO semiconductor materials using photoluminescence and resonance Raman spectroscopy Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 9,Page: 1149-1154
Authors:  Wang Y.-C.;  Wu T.-Z.;  Zhang Q.-L.;  Chen M.-M.;  Su L.-X.;  Tang Z.-K.
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MgxZn1-xO  P-MBE  Photoluminescence  Resonance Raman spectroscopy  X-ray diffraction  
Luminescence characteristics of high-quality ZnO and BeZnO films Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 8,Page: 1035-1039
Authors:  Wang Y.-C.;  Wu T.-Z.;  Su L.-X.;  Zhang Q.-L.;  Chen M.-M.;  Tang Z.-K.
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BeZnO  Molecular beam epitaxy  Photoluminescence  Raman spectrum  ZnO  
Improvement of internal quantum efficiency of asymmetric ZnO/ZnMgO multi-quantum wells Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 7,Page: 872-876
Authors:  Shang K.;  Zhang Z.-Z.;  Li B.-H.;  Xu H.-Y.;  Zhang L.-G.;  Zhao D.-X.;  Liu L.;  Wang S.-P.;  Shen D.-Z.
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Excitons tunneling  Internal quantum efficiency  Quantum wells  ZnO  
ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer Journal article
Materials Research Bulletin, 2012,Volume: 47,Issue: 9,Page: 2673-2675
Authors:  Chen M.;  Zhang Q.;  Su L.;  Su Y.;  Cao J.;  Zhu Y.;  Wu T.;  Gui X.;  Yang C.;  Xiang R.;  Tang Z.
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A. Oxides  B. Epitaxial growth  C. X-ray diffraction  D. Defects  E. Electrical properties  
Influence of Zn/O ratio on structural, electrical and optical properties of ZnO thin films fabricated by plasma-assisted molecular beam epitaxy Journal article
Journal of Alloys and Compounds, 2010,Volume: 503,Issue: 1,Page: 155-158
Authors:  Zhang B.;  Yao B.;  Wang S.;  Li Y.;  Shan C.;  Zhang J.;  Li B.;  Zhang Z.;  Shen D.
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Electrical properties  Optical properties  Stoichiometric  ZnO  
Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Applied Surface Science, 2009,Volume: 255,Issue: 9,Page: 4913-4915
Authors:  Wang S.P.;  Shan C.X.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Shen D.Z.;  Fan X.W.
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Grain boundary  Hall mobility  Molecular beam epitaxy  Zinc oxide