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| Progress on preparation of InAs nanowires by molecular beam epitaxy Conference paper
Materials Science Forum
Authors: Li R.-X.; Tang J.-L.; Fang D.; Wang S.-P.; Zhao H.-F.; Fang X.; Wei Z.-P.; Jia H.-M.; Wang X.-H.; Ma X.-H.
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Applications Growth InAs nanowires MBE |
| Controllable growth of high quality ZnO thin film on C-sapphire Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2015,Volume: 36,Issue: 10,Page: 1171-1177
Authors: Zhang Q.-L.; Su L.-X.; Wu T.-Z.; Wang Y.-C.; Zhu Y.; Chen M.-M.; Gui X.-C.; Tang Z.-K.
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Buffer Defects High quality thin film Stress ZnO |
| Smooth surface morphology of ZnO thin films on sapphire at low temperature Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 5,Page: 542-547
Authors: Zhao P.-C.; Zhang Z.-Z.; Yao B.; Li B.-H.; Wang S.-P.; Jiang M.-M.; Zhao D.-X.; Shan C.-X.; Zhao H.-F.; Liu L.; Shen D.-Z.
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Growth temperature Molecular beam epitaxy Smooth growth ZnO |
| Comparative study of polar and non-polar BeZnO films grown by plasma-assisted molecular beam epitaxy Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 11,Page: 1483-1488
Authors: Wang Y.-C.; Wu T.-Z.; Chen M.-M.; Su L.-X.; Zhang Q.-L.; Tang Z.-K.
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BeZnO Crystal orientation Molecular beam epitaxy Photoluminescence Sapphire |
| Study of MgZnO semiconductor materials using photoluminescence and resonance Raman spectroscopy Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 9,Page: 1149-1154
Authors: Wang Y.-C.; Wu T.-Z.; Zhang Q.-L.; Chen M.-M.; Su L.-X.; Tang Z.-K.
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MgxZn1-xO P-MBE Photoluminescence Resonance Raman spectroscopy X-ray diffraction |
| Luminescence characteristics of high-quality ZnO and BeZnO films Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 8,Page: 1035-1039
Authors: Wang Y.-C.; Wu T.-Z.; Su L.-X.; Zhang Q.-L.; Chen M.-M.; Tang Z.-K.
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BeZnO Molecular beam epitaxy Photoluminescence Raman spectrum ZnO |
| Improvement of internal quantum efficiency of asymmetric ZnO/ZnMgO multi-quantum wells Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 7,Page: 872-876
Authors: Shang K.; Zhang Z.-Z.; Li B.-H.; Xu H.-Y.; Zhang L.-G.; Zhao D.-X.; Liu L.; Wang S.-P.; Shen D.-Z.
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Excitons tunneling Internal quantum efficiency Quantum wells ZnO |
| ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer Journal article
Materials Research Bulletin, 2012,Volume: 47,Issue: 9,Page: 2673-2675
Authors: Chen M.; Zhang Q.; Su L.; Su Y.; Cao J.; Zhu Y.; Wu T.; Gui X.; Yang C.; Xiang R.; Tang Z.
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A. Oxides B. Epitaxial growth C. X-ray diffraction D. Defects E. Electrical properties |
| Influence of Zn/O ratio on structural, electrical and optical properties of ZnO thin films fabricated by plasma-assisted molecular beam epitaxy Journal article
Journal of Alloys and Compounds, 2010,Volume: 503,Issue: 1,Page: 155-158
Authors: Zhang B.; Yao B.; Wang S.; Li Y.; Shan C.; Zhang J.; Li B.; Zhang Z.; Shen D.
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Electrical properties Optical properties Stoichiometric ZnO |
| Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Applied Surface Science, 2009,Volume: 255,Issue: 9,Page: 4913-4915
Authors: Wang S.P.; Shan C.X.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Shen D.Z.; Fan X.W.
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Grain boundary Hall mobility Molecular beam epitaxy Zinc oxide |
