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Effects of LaNiO3 seeding layers on the crystal structure and electrical properties in 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 thin films Journal article
Ceramics International, 2015,Volume: 41,Issue: 10,Page: 12980-12987
Authors:  Li P.;  Zhai J.;  Zeng H.;  Zhao K.;  Shen B.;  Chen H.
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BNT-BT thin film  C. Electrical properties  Crystallography orientation  LNO seeding layers  Sol-gel method  
Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates Journal article
Journal of Applied Physics, 2006,Volume: 100,Issue: 3
Authors:  Zhai J.;  Yao X.;  Xu Z.;  Chen H.
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Electric fatigue properties of Pb(Zr,Ti)O3 thin films grown on LaNiO3 buffer Pt/Ti/SiO2/Si substrate by metalorganic chemical vapor deposition Conference paper
Integrated Ferroelectrics
Authors:  Zhai J.;  Yao X.;  Xu Z.;  Chen H.
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Fatigue  Ferroelectric properties  PZT thin film  Thinckness  
Effect of deposition temperature and post-heat-treatment condition on the characteristics of (100)-self-orientation LaNiO3 films prepared by RF magnetron sputter deposition Conference paper
Materials Research Society Symposium Proceedings
Authors:  Takahashi K.;  Suzuki M.;  Oikawa T.;  Chen H.;  Funakubo H.
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Impact of heat treatment on the electrical properties of LaNiO3 conductive thin films Conference paper
Key Engineering Materials
Authors:  Lu S.G.;  Chen H.
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Conductive  Dielectric properties  Heat annealing  LaNiO3  
Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates Journal article
Applied Physics Letters, 2003,Volume: 82,Issue: 3,Page: 442-444
Authors:  Zhai J.;  Chen H.
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Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si Journal article
Journal of Applied Physics, 2001,Volume: 90,Issue: 3,Page: 1509-1515
Authors:  Lin C.H.;  Friddle P.A.;  Ma C.H.;  Daga A.;  Chen H.
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Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si Journal article
Applied Physics Letters, 1999,Volume: 75,Issue: 16,Page: 2485-2487
Authors:  Lin C.H.;  Lee S.W.;  Chen H.;  Wu T.B.
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Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD Journal article
Materials Research Society Symposium - Proceedings, 1999,Volume: 541,Page: 679-684
Authors:  Lin C.H.;  Kuo H.C.;  Stillman G.E.;  Chen H.
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