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InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands Journal article
NANOTECHNOLOGY, 2018,Volume: 29,Issue: 22
Authors:  Han, Yu;  Li, Qiang;  Ng, Kar Wei;  Zhu, Si;  Lau, Kei May
Favorite  |  View/Download:12/0  |  Submit date:2018/10/30
InP nano-ridges  III-V on Si  Si photonics  InGaAs quantum wires  
Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths Journal article
Optica, 2017,Volume: 4,Issue: 7,Page: 717-723
Authors:  Lu F.;  Bhattacharya I.;  Sun H.;  Tran T.-T.D.;  Ng K.W.;  Malheiros-Silveira G.N.;  Chang-Hasnain C.
Favorite  |  View/Download:0/0  |  Submit date:2019/04/08
Integrated optics devices  Quantum-well, -wire and -dot devices  Semiconductor lasers  Subwavelength structures, nanostructures  Vertical emitting lasers