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High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018,Volume: 65,Issue: 12,Page: 5337-5342
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
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III-nitride  gate dielectric  leakage  metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs)  power  ZrO2  
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO 2 Gate Dielectric Journal article
IEEE Transactions on Electron Devices, 2018,Volume: 65,Issue: 12,Page: 5337-5342
Authors:  Jiang H.;  Liu C.;  Ng K.W.;  Tang C.W.;  Lau K.M.
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gate dielectric  III-nitride  leakage  metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs)  power  ZrO 2  
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates Journal article
Journal of Crystal Growth, 2007,Volume: 298,Issue: SPEC. ISS,Page: 725-730
Authors:  Zhang B.;  Liang H.;  Wang Y.;  Feng Z.;  Ng K.W.;  Lau K.M.
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A1. X-ray diffraction  A3. Metalorganic chemical vapor deposition  B1. Nitride  B2. Semiconductor III-V materials  B3. Light-emitting diodes