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Control of the degree of compositional ordering of Pb2YbMO6 (M - Nb, Ta) perovskites by means of mechanical activation Journal article
FERROELECTRICS, FERROELECTRICS, 2018, 2018,Volume: 525, 525,Issue: 1,Page: 54-63, 54-63
Authors:  Raevski, I. P.;  Gusev, A. A.;  Isupov, V. P.;  Raevskaya, S. I.;  Titov, V. V.;  Chen, H.
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Pb2YbNbO6  Pb2YbNbO6  Pb2YbTaO6  Pb2YbTaO6  compositional ordering  compositional ordering  mechanical activation  mechanical activation  phase transition  phase transition  
Influence of epitaxial strain on clustering of iron in Pb(Fe1/2Nb1/2) O3 thin films Journal article
Physical Review B - Condensed Matter and Materials Physics, 2015,Volume: 92,Issue: 22
Authors:  Prosandeev S.A.;  Raevski I.P.;  Raevskaya S.I.;  Chen H.
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Phase stability and pyroelectricity of antiferroelectric PLZST oxide Journal article
Journal of Electroceramics, 2008,Volume: 21,Issue: 1-4 SPEC. ISS.,Page: 145-148
Authors:  Chan W.-H.;  Xu Z.;  Zhai J.;  Colla E.V.;  Chen H.
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Antiferroelectric  Frequency dispersion  PLZST ceramics  Pyroelectric properties  Tunability  
Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing Journal article
Journal of Sol-Gel Science and Technology, 2007,Volume: 42,Issue: 3,Page: 369-373
Authors:  Zhai J.;  Shen B.;  Yao X.;  Xu Z.;  Li X.;  Chen H.
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Antiferroelectric  Electrical property  Phase transformation  Sol-gel process  Thin film  
The effect of dc bias on the poled states in PNZST antiferroelectric thin films Journal article
Journal of Physics D: Applied Physics, 2007,Volume: 40,Issue: 6,Page: 1811-1815
Authors:  Zhai J.;  Yao X.;  Xu Z.;  Chen H.
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Phase transformation and electric field tunable pyroelectric behavior of Pb (Nb,Zr,Sn,Ti)O3 and (Pb,La) (Zr,Sn,Ti)O3 antiferroelectric thin films Journal article
Applied Physics Letters, 2006,Volume: 88,Issue: 13
Authors:  Xu Z.;  Zhai J.;  Chan W.-H.;  Chen H.
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Uncooled tunable pyroelectric response of antiferroelectric Pb 0.97La0.02(Zr0.65Sn0.22Ti 0.13)O3 perovskite Journal article
Applied Physics Letters, 2005,Volume: 87,Issue: 19,Page: 1-3
Authors:  Chan W.-H.;  Xu Z.;  Zhai J.;  Chen H.
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The temporal effects in DC-biased PbNb(Zr,Sn,Ti)O3 antiferroelectric thin films Conference paper
Ceramic Transactions
Authors:  Zhai J.;  Chen H.;  Colla E.V.
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(Pb,La) (Zr,Sn,Ti) O3 antiferroelectric thin films grown on LaNi O3-buffered and Pt-buffered silicon substrates by sol-gel processing Journal article
Journal of Applied Physics, 2005,Volume: 97,Issue: 2
Authors:  Li X.;  Zhai J.;  Chen H.
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Impact of heat treatment on the electrical properties of LaNiO3 conductive thin films Conference paper
Key Engineering Materials
Authors:  Lu S.G.;  Chen H.
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Conductive  Dielectric properties  Heat annealing  LaNiO3