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MBE-grown Zincblende MnSe 1−x Te x Thin Films on ZnTe Journal article
Journal of Crystal Growth, 2019,Volume: 511,Page: 19-24
Authors:  Cheng M.K.;  Liang J.;  Xu J.;  Lai Y.H.;  Ho S.K.;  Tam K.W.;  Sou I.K.
Favorite | View/Download:9/0 | TC[WOS]:0 TC[Scopus]:1 | Submit date:2019/03/01
A1. High resolution X-ray diffraction  A3. Molecular beam epitaxy  B1. Alloys  B1. Tellurites  
MBE-grown Zincblende MnSe1−xTex Thin Films on ZnTe Journal article
Journal of Crystal Growth, 2019,Volume: 511,Page: 19-24
Authors:  Cheng M.K.;  Liang J.;  Xu J.;  Lai Y.H.;  Ho S.K.;  Tam K.W.;  Sou I.K.
Favorite | View/Download:20/0 | TC[WOS]:0 TC[Scopus]:1 | Submit date:2019/02/13
A1. High resolution X-ray diffraction  A3. Molecular beam epitaxy  B1. Alloys  B1. Tellurites  
Degenerated MgZnO films obtained by excessive zinc Journal article
Journal of Crystal Growth, 2012,Volume: 347,Issue: 1,Page: 95-98
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang Z.Z.;  Shen D.Z.
Favorite | View/Download:9/0 | TC[WOS]:10 TC[Scopus]:10 | Submit date:2019/04/08
A1. Characterization  A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  
A route to single-crystalline ZnO films with low residual electron concentration Journal article
Journal of Crystal Growth, 2010,Volume: 312,Issue: 20,Page: 2861-2864
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Sun F.;  Yao B.;  Shen D.Z.
Favorite | View/Download:7/0 | TC[WOS]:10 TC[Scopus]:10 | Submit date:2019/04/08
A1. X-ray diffraction  A3. Molecular beam epitaxy  B1. Zinc compounds  B2. Semiconducting II-VI materials  
A facile route to arsenic-doped p-type ZnO films Journal article
Journal of Crystal Growth, 2009,Volume: 311,Issue: 14,Page: 3577-3580
Authors:  Wang S.P.;  Shan C.X.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.
Favorite | View/Download:9/0 | TC[WOS]:17 TC[Scopus]:18 | Submit date:2019/04/08
A1. Diffusion  A1. Doping  A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  
Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 373-377
Authors:  Lu Y.M.;  Wang X.;  Zhang Z.Z.;  Shen D.Z.;  Su S.C.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
Favorite | View/Download:4/0 | TC[WOS]:20 TC[Scopus]:21 | Submit date:2019/04/08
A1. Atomic force microscopy  A1. Photoluminescence  A1. X-ray diffraction  A3. Molecular beam epitaxy  B1. Zinc oxide  
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 362-365
Authors:  Zhang Z.Z.;  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Yao B.;  Li B.H.;  Zhao D.X.;  Zhang J.Y.;  Fan X.W.;  Tang Z.K.
Favorite | View/Download:7/0 | TC[WOS]:25 TC[Scopus]:27 | Submit date:2019/04/08
A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  B3. Light-emitting diodes