UM
The effect of mechanical activation on dielectric properties of ceramic ferroelectrics-relaxors PbMg1/3Nb2/3O3 and PbFe1/2Ta1/2O3
Raevskaya, S. I.; Gusev, A. A.; Isupov, V. P.; Kubrin, S. P.; Raevski, I. P.; Titov, V. V.; Chen, H.
2018
Source PublicationFERROELECTRICS
ISSN0015-0193
Volume525Issue:1Pages:37-46
AbstractHigh-energy mechanical activation of the starting oxides was found to reduce dramatically or even suppress the frequency shift of the dielectric permittivity maximum of ceramic ferroelectrics-relaxors PbMg1/3Nb2/3O3 and PbFe1/2Ta1/2O3 sintered from the mixture of these oxides. At the same time, the value of permittivity maximum does not change substantially. On increase of the sintering temperature above approximate to 1100 degrees C for PbFe1/2Ta1/2O3 and approximate to 1200 degrees C for PbMg1/3Nb2/3O3 the effect of mechanical activation on dielectric properties of both these ceramics gradually vanishes.
KeywordPMN PFT dielectric response relaxor mechanical activation
DOI10.1080/00150193.2018.1432921
URLView the original
Indexed BySCI
Language英语
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Condensed Matter
WOS IDWOS:000427943200006
PublisherTAYLOR & FRANCIS LTD
The Source to ArticleWOS
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionUniversity of Macau
Recommended Citation
GB/T 7714
Raevskaya, S. I.,Gusev, A. A.,Isupov, V. P.,et al. The effect of mechanical activation on dielectric properties of ceramic ferroelectrics-relaxors PbMg1/3Nb2/3O3 and PbFe1/2Ta1/2O3[J]. FERROELECTRICS,2018,525(1):37-46.
APA Raevskaya, S. I..,Gusev, A. A..,Isupov, V. P..,Kubrin, S. P..,Raevski, I. P..,...&Chen, H..(2018).The effect of mechanical activation on dielectric properties of ceramic ferroelectrics-relaxors PbMg1/3Nb2/3O3 and PbFe1/2Ta1/2O3.FERROELECTRICS,525(1),37-46.
MLA Raevskaya, S. I.,et al."The effect of mechanical activation on dielectric properties of ceramic ferroelectrics-relaxors PbMg1/3Nb2/3O3 and PbFe1/2Ta1/2O3".FERROELECTRICS 525.1(2018):37-46.
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