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Band offset and an ultra-fast response UV-VIS photodetector in gamma-In2Se3/p-Si heterojunction heterostructures
Fang, Y. X.; Zhang, H.; Azad, F.; Wang, S. P.; Ling, F. C. C.; Su, S. C.
2018
Source PublicationRSC ADVANCES
ISSN2046-2069
Volume8Issue:52Pages:29555-29561
AbstractHigh-quality -In2Se3 thin films and a -In2Se3/p-Si heterojunction were prepared using pulse laser deposition (PLD). The band offset of this heterojunction was studied by XPS and the band structure was found to be type II structure. The valence band offset (E-v) and the conduction band offset (E-c) of the heterojunction were determined to be 1.2 +/- 0.1 eV and 0.27 +/- 0.1 eV, respectively. The -In2Se3/p-Si heterojunction photodetector has high responsivity under UV to visible light illumination. The heterojunction exhibits highly stable photodetection characteristics with an ultrafast response/recovery time of 15/366 s. The ultrafast response time was attributed to type II structure band alignment, which was good for the separation of electron-hole pairs and it can quickly reduce recombination. These excellent properties make -In2Se3/p-Si heterojunctions a promising candidate for photodetector applications.
DOI10.1039/c8ra05677c
URLView the original
Indexed BySCI
Language英语
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
WOS IDWOS:000443624500010
PublisherROYAL SOC CHEMISTRY
The Source to ArticleWOS
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Cited Times [WOS]:2   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Recommended Citation
GB/T 7714
Fang, Y. X.,Zhang, H.,Azad, F.,et al. Band offset and an ultra-fast response UV-VIS photodetector in gamma-In2Se3/p-Si heterojunction heterostructures[J]. RSC ADVANCES,2018,8(52):29555-29561.
APA Fang, Y. X.,Zhang, H.,Azad, F.,Wang, S. P.,Ling, F. C. C.,&Su, S. C..(2018).Band offset and an ultra-fast response UV-VIS photodetector in gamma-In2Se3/p-Si heterojunction heterostructures.RSC ADVANCES,8(52),29555-29561.
MLA Fang, Y. X.,et al."Band offset and an ultra-fast response UV-VIS photodetector in gamma-In2Se3/p-Si heterojunction heterostructures".RSC ADVANCES 8.52(2018):29555-29561.
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