UM
Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (∼1.3μm)
Shi J.-W.4; Gan K.-G.1; Bowers J.E.1; Liu T.-M.3; Sun C.-K.3; Chiu Y.-J.2
2003
Source PublicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume2
AbstractWe observed distinct nonlinear behaviors of bandwidth degradation in low-temperature-grown-GaAs based traveling-wave-photodetectors under long wavelength (∼1300nm) operation. The disclosed unique material properties of LTG-GaAs at different excitation wavelengths are important for its applications in ultrafast optoelectronic and understanding its carrier dynamics in the defect states.
DOI10.1109/CLEOPR.2003.1276962
URLView the original
Language英語
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Document TypeConference paper
CollectionUniversity of Macau
Affiliation1.University of California System
2.National Sun Yat-Sen University Taiwan
3.National Taiwan University
4.Industrial Technology Research Institute of Taiwan
Recommended Citation
GB/T 7714
Shi J.-W.,Gan K.-G.,Bowers J.E.,et al. Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (∼1.3μm)[C],2003.
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