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A SAW-Less Tunable RF Front End for FDD and IBFD Combining an Electrical-Balance Duplexer and a Switched-LC N-Path LNA
Qi, Gengzhen1; van Liempd, Barend2; Mak, Pui-In3; Martins, Rui P.3; Craninckx, Jan2
2018-05
Source PublicationIEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN0018-9200
Volume53Issue:5Pages:1431-1442
Abstract

This paper proposes a surface-acoustic wave (SAW)less tunable RF front end (RF-FE) using an electrical-balance duplexer (EBD) integrated with a switched-LC N-path low-noise amplifier (LNA). The EBD cancels the transmitter-receiver (TX-RX) leakage at the RX frequency by dynamically optimizing the balance of a hybrid transformer, which enables in-band full-duplex (IBFD) operation. A transconductor-based LNA in parallel with a switched-LC N-path network creates input and output notches to reject TX leakage for frequency-division duplexing (FDD) operation. The LNA's signal-handling capability is enhanced via optimum switch biasing. Fabricated in 0.18-mu m SOI CMOS, the RF-FE offers > 50-dB tunable rejection from the TX port to LNA output at both TX and RX frequencies, for all 3GPP bands from 0.7 to 1 GHz (i.e., FDD case). It is the first tunable RF-FE including an LNA that achieves + 70-dBm TX-path IIP3, and <-100-dBm IM3 at + 20-dBm TX power when a full-duplex spaced jammer is applied at the antenna (FDD case). It is also the first to handle >+ 30-dBm in-band TX power while cancelling the self-interference by > 50 dB (i.e., IBFD case). The RF-FE consumes 62.5 mW at 1 GHz with 11.7-dB RX cascaded NF, 3.6-dB TX insertion loss, and 9.62 mm(2) active area.

KeywordElectrical-balance Duplexer (Ebd) In-band Full Duplex (Ibfd) Local Thermal Equilibrium (Lte)-frequency-division Duplexing (Fdd) Low-noise Amplifier (Lna) Rf Front-end (Rf-fe) Soi Cmos Switched-lc N-path Filtering Tunable
DOIhttp://doi.org/10.1109/JSSC.2018.2791477
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000430959900017
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
The Source to ArticleWOS
Fulltext Access
Citation statistics
Cited Times [WOS]:12   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Affiliation1.Perceptive Systems, IMEC, Leuven, Belgium
2.IMEC, Leuven, Belgium
3.Department of ECE, State-Key Laboratory of Analog and Mixed-Signal VLSI, Faculty of Science and Technology, University of Macau, Macao, China
Recommended Citation
GB/T 7714
Qi, Gengzhen,van Liempd, Barend,Mak, Pui-In,et al. A SAW-Less Tunable RF Front End for FDD and IBFD Combining an Electrical-Balance Duplexer and a Switched-LC N-Path LNA[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS,2018,53(5):1431-1442.
APA Qi, Gengzhen,van Liempd, Barend,Mak, Pui-In,Martins, Rui P.,&Craninckx, Jan.(2018).A SAW-Less Tunable RF Front End for FDD and IBFD Combining an Electrical-Balance Duplexer and a Switched-LC N-Path LNA.IEEE JOURNAL OF SOLID-STATE CIRCUITS,53(5),1431-1442.
MLA Qi, Gengzhen,et al."A SAW-Less Tunable RF Front End for FDD and IBFD Combining an Electrical-Balance Duplexer and a Switched-LC N-Path LNA".IEEE JOURNAL OF SOLID-STATE CIRCUITS 53.5(2018):1431-1442.
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