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The termodynamic model of open-circuit potential for electroless deposition of Ni on silicon
Chang Y.L.; Ye W.C.; Ma C.L.; Wang C.M.
2006-09-13
Source PublicationJournal of the Electrochemical Society
ISSN00134651
Volume153Issue:10
AbstractThis investigation first proposed that open-circuit potential vs time (OCP-t) is a novel nonlinear potential step controlled by redox reaction and nucleation. A novel thermodynamic model of OCP-t is obtained for electroless deposition of Ni on Pd-activated p-type silicon(100). Thermodynamic transient properties such as capacity of double layer C, surface charge density q, interfacial tension γ, and resistance of chemical reaction Rr are calculated. Results show that the variation of OCP is dependant on the interfacial double layer. The breakdown and rearrangement of the double layer causes surface charge density step, which triggers momentary nucleation of Ni on the substrate. Results also show that reductant pulses would be an effective way to speed nuclei growth. © 2006 The Electrochemical Society. All rights reserved.
DOI10.1149/1.2221862
URLView the original
Language英語
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Cited Times [WOS]:5   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionInstitute of Chinese Medical Sciences
AffiliationLanzhou University
Recommended Citation
GB/T 7714
Chang Y.L.,Ye W.C.,Ma C.L.,et al. The termodynamic model of open-circuit potential for electroless deposition of Ni on silicon[J]. Journal of the Electrochemical Society,2006,153(10).
APA Chang Y.L.,Ye W.C.,Ma C.L.,&Wang C.M..(2006).The termodynamic model of open-circuit potential for electroless deposition of Ni on silicon.Journal of the Electrochemical Society,153(10).
MLA Chang Y.L.,et al."The termodynamic model of open-circuit potential for electroless deposition of Ni on silicon".Journal of the Electrochemical Society 153.10(2006).
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