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Study of the electroless silver seed formation on silicon surface
Tong H.1; Wang C.-M.2; Ye W.-C.2; Chang Y.-L.2; Li H.-L.1
2007-02-01
Source PublicationChinese Journal of Chemistry
ISSN1001604X
Volume25Issue:2Pages:208-212
Abstract

The silver seed on silicon was prepared through aqueous HF and AgNO solution at room temperature. In order to explore the formation process of silver seed on silicon, the methods of open circuit potential with time (OCP-t), anodic stripping sweep voltammetry (ASV) and scanning tunneling microscope (STM) were used in this work. The procedure of silver nucleus growing into large particles was explained by electro-negativity. The growth mechanism of silver seed on silicon has been presented: at first, the silver monolayer and multilayer firstly grows onto silicon without fully covering the surface at the expense of silicon etching due to the silver seed attracting the electron from silicon, after that, the monolayer coalesces together, forming continuous grain film with some silver atoms diffusing into the silicon and the multilayer still grows thick simultaneously. © 2007 SIOC, CAS, & Wiley-VCH Verlag GmbH & Co. KGaA.

KeywordElectroless Monolayer Silicon Silver Seed
DOI10.1002/cjoc.200790042
URLView the original
Indexed BySCI
Language英语
WOS Research AreaChemistry
WOS SubjectChemistry, Multidisciplinary
WOS IDWOS:000244136900014
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被引频次[WOS]:4   [WOS记录]     [WOS相关记录]
Document TypeJournal article
专题Institute of Chinese Medical Sciences
Affiliation1.Nanjing University of Aeronautics and Astronautics
2.Lanzhou University
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GB/T 7714
Tong H.,Wang C.-M.,Ye W.-C.,et al. Study of the electroless silver seed formation on silicon surface[J]. Chinese Journal of Chemistry,2007,25(2):208-212.
APA Tong H.,Wang C.-M.,Ye W.-C.,Chang Y.-L.,&Li H.-L..(2007).Study of the electroless silver seed formation on silicon surface.Chinese Journal of Chemistry,25(2),208-212.
MLA Tong H.,et al."Study of the electroless silver seed formation on silicon surface".Chinese Journal of Chemistry 25.2(2007):208-212.
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