| InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands | |
| Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May | |
| 2018-06 | |
| Source Publication | NANOTECHNOLOGY
 |
| ISSN | 0957-4484 |
| Volume | 29Issue:22 |
| Abstract | We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates. |
| Keyword | InP nano-ridges III-V on Si Si photonics InGaAs quantum wires |
| DOI | 10.1088/1361-6528/aab53b |
| URL | View the original |
| Indexed By | SCI |
| Language | 英语 |
| WOS Research Area | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| WOS ID | WOS:000428932300001 |
| Publisher | IOP PUBLISHING LTD |
| The Source to Article | WOS |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Journal article |
| Collection | University of Macau |
| Recommended Citation GB/T 7714 | Han, Yu,Li, Qiang,Ng, Kar Wei,et al. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands[J]. NANOTECHNOLOGY,2018,29(22). |
| APA | Han, Yu,Li, Qiang,Ng, Kar Wei,Zhu, Si,&Lau, Kei May.(2018).InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.NANOTECHNOLOGY,29(22). |
| MLA | Han, Yu,et al."InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands".NANOTECHNOLOGY 29.22(2018). |
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