UM
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands
Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May
2018-06
Source PublicationNANOTECHNOLOGY
ISSN0957-4484
Volume29Issue:22
AbstractWe report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.
KeywordInP nano-ridges III-V on Si Si photonics InGaAs quantum wires
DOI10.1088/1361-6528/aab53b
URLView the original
Indexed BySCI
Language英语
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000428932300001
PublisherIOP PUBLISHING LTD
The Source to ArticleWOS
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Cited Times [WOS]:10   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Recommended Citation
GB/T 7714
Han, Yu,Li, Qiang,Ng, Kar Wei,et al. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands[J]. NANOTECHNOLOGY,2018,29(22).
APA Han, Yu,Li, Qiang,Ng, Kar Wei,Zhu, Si,&Lau, Kei May.(2018).InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.NANOTECHNOLOGY,29(22).
MLA Han, Yu,et al."InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands".NANOTECHNOLOGY 29.22(2018).
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