InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands

doi:10.1088/1361-6528/aab53b

	InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands
	Han, Yu; Li, Qiang; Ng, Kar Wei; Zhu, Si; Lau, Kei May
	2018-06
Source Publication	NANOTECHNOLOGY
ISSN	0957-4484
Volume	29 Issue:22
Abstract	We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.
Keyword	InP nano-ridges III-V on Si Si photonics InGaAs quantum wires
DOI	10.1088/1361-6528/aab53b
URL	View the original
Indexed By	SCI
Language	英语
WOS Research Area	Science & Technology - Other Topics ; Materials Science ; Physics
WOS Subject	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS ID	WOS:000428932300001
Publisher	IOP PUBLISHING LTD
The Source to Article	WOS
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science
Citation statistics	Cited Times [WOS]:10 [WOS Record] [Related Records in WOS]
Document Type	Journal article
Collection	University of Macau
Recommended Citation GB/T 7714	Han, Yu,Li, Qiang,Ng, Kar Wei,et al. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands[J]. NANOTECHNOLOGY,2018,29(22).
APA	Han, Yu,Li, Qiang,Ng, Kar Wei,Zhu, Si,&Lau, Kei May.(2018).InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands.NANOTECHNOLOGY,29(22).
MLA	Han, Yu,et al."InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands".NANOTECHNOLOGY 29.22(2018).

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh