UM
A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS
Yi, Haidong; Yu, Wei-Han; Mak, Pui-In; Yin, Jun; Martins, Rui P.
2018-06
Source PublicationIEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN0018-9200
Volume53Issue:6Pages:1618-1627
AbstractThis paper describes an ultra-low-voltage Bluetooth low-energy (BLE) receiver (RX) front end with an on-chip micropower manager (mu PM) to customize the internal voltage domains. It aims at direct powering by the sub-0.5-V energy-harvesting sources like the on-body thermoelectric, eliminating the loss and cost of the interim dc-dc converters. Specifically, the RX incorporates: 1) a two-stage power-gating low-noise amplifier with fully on-chip input-impedance matching and passive gain boosting reducing both the active and sleep power; 2) a class-D voltage-controlled oscillator (VCO) in parallel with a class-C starter to secure a fast startup; and 3) a mu PM using ring-VCO-locked charge pumps and bandgap references to withstand the supply-voltage variation (0.18-0.3 V). Fabricated in 28-nm CMOS, the RX operates down to a 0.18-V supply, while exhibiting 11.3-dB NF and -12.5-dBm out-of-band IIP3. The VCO shows < -113 dBc/Hz phase noise at 2.5-MHz offset. The active and sleep power are 382 mu W and 1.33 nW, respectively.
KeywordBandgap reference (BGR) Bluetooth low energy (BLE) charge pump (CP) class-D voltage-controlled oscillator (VCO) CMOS energy harvesting low-noise amplifier (LNA) micropower manager (mu PM) power-gating receiver (RX) ultra-low power (ULP) ultra-low voltage (ULV)
DOI10.1109/JSSC.2018.2815987
URLView the original
Indexed BySCI
Language英语
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000433336200005
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
The Source to ArticleWOS
Fulltext Access
Citation statistics
Cited Times [WOS]:6   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Recommended Citation
GB/T 7714
Yi, Haidong,Yu, Wei-Han,Mak, Pui-In,et al. A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS,2018,53(6):1618-1627.
APA Yi, Haidong,Yu, Wei-Han,Mak, Pui-In,Yin, Jun,&Martins, Rui P..(2018).A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS.IEEE JOURNAL OF SOLID-STATE CIRCUITS,53(6),1618-1627.
MLA Yi, Haidong,et al."A 0.18-V 382-mu W Bluetooth Low-Energy Receiver Front-End With 1.33-nW Sleep Power for Energy-Harvesting Applications in 28-nm CMOS".IEEE JOURNAL OF SOLID-STATE CIRCUITS 53.6(2018):1618-1627.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yi, Haidong]'s Articles
[Yu, Wei-Han]'s Articles
[Mak, Pui-In]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yi, Haidong]'s Articles
[Yu, Wei-Han]'s Articles
[Mak, Pui-In]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yi, Haidong]'s Articles
[Yu, Wei-Han]'s Articles
[Mak, Pui-In]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.