A 0.46mm24dB-NF unified receiver front-end for full-band mobile TV in 65nm CMOS
Mak, Pui-In1; Martins, Rui1,2
Source PublicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Author of SourceInstitute of Electrical and Electronics Engineers Inc.
AbstractThis paper describes a unified receiver front-end (RFE) for mobile TV covering the VHF-III (174 to 248MHz), UHF (470 to 862MHz) and L (1.4 to 1.7GHz) bands. The RFE (Fig. 9.7.1) is tailored to avert any external balun, or dedicated narrow-band radios, commonly found in prior arts [1, 2]. The featured advances are threefold: 1) a gain-boosting current-balancing balun-LNA addresses the imbalanced bias current (ICS=4ICG) and load (RCG=4RCS) conditions of the noise-canceling balun-LNA [3], improving IIP2 and wideband output balancing while eliminating output buffers; 2) a current-reuse mixer-LPF realizes quadrature/ harmonic-rejection (HR) mixing and 3rd-order current-mode post filtering in one block, enhancing linearity and noise just where both are demanding, while saving power and area; 3) a direct injection-locked 4-/8-phase LO generator (LOG) relaxes the master LO frequency (fLO) by avoiding frequency division. A high fLOhas been the speed limit of wideband RFEs with HR, such as [4], where a 7.2GHz fLOis employed for 0.9GHz RF reception after divide-by-8. Here, the LOG uses 2 chains of 8-phase corrector (8PC) and 1 chain of 4-phase corrector (4PC) to optimize the phase precision in each band. A master LOin(e.g., from VCO) injection locks either one of the chains to synthesize a 4-/8-phase LOoutat fLO. This LOG scheme particularly suits this application, as the problem of VCO pulling is irrelevant here in the absence of the PA. © 2011 IEEE.
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Document TypeConference paper
Affiliation1.University of Macau, China;
2.Instituto Superior Tecnico, Lisbon, Portugal
First Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Mak, Pui-In,Martins, Rui. A 0.46mm24dB-NF unified receiver front-end for full-band mobile TV in 65nm CMOS[C]//Institute of Electrical and Electronics Engineers Inc.,2011:172-173.
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