An inverse-class-F CMOS VCO with intrinsic-high-Q 1st- and 2nd-harmonic resonances for 1/f2-to-1/f3phase-noise suppression achieving 196.2dBc/Hz FOM | |
Lim, Chee-Cheow1,2; Yin, Jun1; Mak, Pui-In1; Ramiah, Harikrishnan2; Martins, Rui P.1,3 | |
2018-03-08 | |
Conference Name | 65th IEEE International Solid-State Circuits Conference, ISSCC 2018 |
Source Publication | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
Volume | 61 |
Pages | 374-376 |
Conference Date | 2 11, 2018 - 2 15, 2018 |
Conference Place | San Francisco, CA, United states |
Author of Source | Institute of Electrical and Electronics Engineers Inc. |
Abstract | Second-harmonic common-mode (CM) resonance has been explored for LC oscillators to improve their phase noise (PN) in the past. Its implementation evolves from an explicit design [1] that relies on an extra tail tank, to a recent implicit design [2], where the resonator itself offers a CM impedance peak at 2x the oscillation frequency (FLO): Explicit design (Fig. 23.5.1-upper): a high-Q tail tank (QTAIL) is desirable to raise its impedance ZTAILat 2FLO and to prevent the loss of LTAILfrom penalizing the PN in the 1/f2region [3]. To compare with the theoretical limit (FOMMAX), the FOM in the 1/f2PN region is plotted against LTAILat different QTAIL. Closing the gap between FOMMAXand FOM imposes an excessive QTAILof 20 or beyond, which can hardly be achieved and maintained over a wide tuning range. © 2018 IEEE. |
DOI | 10.1109/ISSCC.2018.8310340 |
Language | 英语 |
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Document Type | Conference paper |
Collection | University of Macau |
Affiliation | 1.University of Macau, China; 2.University of Malaya, Kuala Lumpur, Malaysia; 3.Instituto Superior Tecnico, University of Lisboa, Lisbon, Portugal |
First Author Affilication | University of Macau |
Recommended Citation GB/T 7714 | Lim, Chee-Cheow,Yin, Jun,Mak, Pui-In,et al. An inverse-class-F CMOS VCO with intrinsic-high-Q 1st- and 2nd-harmonic resonances for 1/f2-to-1/f3phase-noise suppression achieving 196.2dBc/Hz FOM[C]//Institute of Electrical and Electronics Engineers Inc.,2018:374-376. |
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