Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands

doi:10.1364/OPTICA.5.000918

	Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands
	Han, Yu; Ng, Wai Kit; Ma, Chao; Li, Qiang; Zhu, Si; Chan, Christopher C. S.; Ng, Kar Wei; Lennon, Stephen; Taylor, Robert A.; Wong, Kam Sing; Lau, Kei May
	2018-08-20
Source Publication	OPTICA
ISSN	2334-2536
Volume	5 Issue:8 Pages:918-923
Abstract	Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature with ultra-low lasing thresholds. Using a cycled growth procedure, ridge InGaAs quantum wells inside InP nano-ridges grown on patterned (001) Si substrates are designed as active gain materials. Room-temperature lasing at the telecom bands is achieved by transferring the InP/InGaAs nano-ridges onto a SiO2/Si substrate for optical excitation. We also show that the operation wavelength of InP/InGaAs nano-lasers can be adjusted by altering the excitation power density and the length of the nano-ridges formed in a single growth run. These results indicate the excellent optical properties of the InP/InGaAs nano-ridges grown on (001) Si substrates and pave the way towards telecom InP/InGaAs nano-laser arrays on CMOS standard Si or silicon-on-insulator substrates. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
DOI	10.1364/OPTICA.5.000918
URL	View the original
Indexed By	SCI
Language	英语
WOS Research Area	Optics
WOS Subject	Optics
WOS ID	WOS:000442106100004
Publisher	OPTICAL SOC AMER
The Source to Article	WOS
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science
Citation statistics	Cited Times [WOS]:11 [WOS Record] [Related Records in WOS]
Document Type	Journal article
Collection	University of Macau
Recommended Citation GB/T 7714	Han, Yu,Ng, Wai Kit,Ma, Chao,et al. Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands[J]. OPTICA,2018,5(8):918-923.
APA	Han, Yu.,Ng, Wai Kit.,Ma, Chao.,Li, Qiang.,Zhu, Si.,...&Lau, Kei May.(2018).Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands.OPTICA,5(8),918-923.
MLA	Han, Yu,et al."Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands".OPTICA 5.8(2018):918-923.

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