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Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells
Wu, Bo1; Zhou, Yuanyuan2; Xing, Guichuan3; Xu, Qiang1; Garces, Hector F.2; Solanki, Ankur1; Goh, Teck Wee1; Padture, Nitin P.2; Sum, Tze Chien1
2017-02-17
Source PublicationADVANCED FUNCTIONAL MATERIALS
ISSN1616-301X
Volume27Issue:7
Abstract

Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their poor photophysical properties (i.e., short diffusion lengths (<30 nm) and two orders of magnitude higher defect densities) than Pb-based systems. Herein, it is revealed that melt-synthesized cesium tin iodide (CsSnI3) ingots containing high-quality large single crystal (SC) grains transcend these fundamental limitations. Through detailed optical spectroscopy, their inherently superior properties are uncovered, with bulk carrier lifetimes reaching 6.6 ns, doping concentrations of around 4.5 x 10(17) cm(-3), and minority-carrier diffusion lengths approaching 1 mu m, as compared to their polycrystalline counterparts having approximate to 54 ps, approximate to 9.2 x 10(18) cm(-3), and approximate to 16 nm, respectively. CsSnI3 SCs also exhibit very low surface recombination velocity of approximate to 2 x 10(3) cm s(-1), similar to Pb-based perovskites. Importantly, these key parameters are comparable to high-performance p-type photovoltaic materials (e.g., InP crystals). The findings predict a PCE of approximate to 23% for optimized CsSnI3 SCs solar cells, highlighting their great potential.

DOI10.1002/adfm.201604818
URLView the original
Indexed BySCI
Language英语
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000394681900017
PublisherWILEY-V C H VERLAG GMBH
The Source to ArticleWOS
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Cited Times [WOS]:45   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionInstitute of Applied Physics and Materials Engineering
Affiliation1.Division of Physics and Applied PhysicsSchool of Physical and Mathematical SciencesNanyang Technological University21 Nanyang Link 637371, Singapore
2.School of EngineeringBrown UniversityProvidence, RI 02912, USA
3.Institute of Applied Physics and Materials EngineeringFaculty of Science and TechnologyUniversity of MacauE12, Macao, SAR, China
Recommended Citation
GB/T 7714
Wu, Bo,Zhou, Yuanyuan,Xing, Guichuan,et al. Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells[J]. ADVANCED FUNCTIONAL MATERIALS,2017,27(7).
APA Wu, Bo.,Zhou, Yuanyuan.,Xing, Guichuan.,Xu, Qiang.,Garces, Hector F..,...&Sum, Tze Chien.(2017).Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells.ADVANCED FUNCTIONAL MATERIALS,27(7).
MLA Wu, Bo,et al."Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells".ADVANCED FUNCTIONAL MATERIALS 27.7(2017).
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