UM
An X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces
Chen H.2; White G.E.2; Stock S.R.2; Ho P.S.1
1982-07-09
Source PublicationThin Solid Films
ISSN00406090
Volume93Issue:1-2Pages:161-169
AbstractThe domain structures of palladium and PdSi as well as their crystallographic relationship to the silicon substrates were determined on Si(111) and Si(100) samples by mapping X-ray diffraction pole figures. X-ray diffraction topography and rocking curve measurements were carried out for the silicon substrates in order to detect the presence of elastic and/or plastic deformation in the substrates caused by silicide formation. The stresses in the silicide films were determined from the bending of the silicon substrates using X-ray diffraction techniques. © 1982.
DOI10.1016/0040-6090(82)90101-8
URLView the original
Language英語
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Cited Times [WOS]:9   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.IBM Thomas J. Watson Research Center
2.University of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Chen H.,White G.E.,Stock S.R.,et al. An X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces[J]. Thin Solid Films,1982,93(1-2):161-169.
APA Chen H.,White G.E.,Stock S.R.,&Ho P.S..(1982).An X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces.Thin Solid Films,93(1-2),161-169.
MLA Chen H.,et al."An X-ray study of domain structure and stress in Pd2Si films at Pd-Si interfaces".Thin Solid Films 93.1-2(1982):161-169.
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