UM
Measurement of thermal stress in Pd 2 Si film on Si(111) by absorption edge contour mapping
Chen H.2; White G.E.2; Stock S.R.1
1986
Source PublicationMaterials Letters
ISSN0167577X
Volume4Issue:2Pages:61-64
AbstractThe film stress due to thermal mismatch between the Si(111) substrate and the overlying epitaxial Pd Si thin film has been measured by a novel technique named absorption edge contour (AEC) mapping using synchrotron radiation. The thermal expansion coefficient for Pd Si has been determined to be 23 × 10 K . Stress relaxation was observed after prolonged annealing at temperatures greater than 200°C. © 1986.
DOI10.1016/0167-577X(86)90050-9
URLView the original
Language英語
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Cited Times [WOS]:2   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Georgia Institute of Technology
2.University of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Chen H.,White G.E.,Stock S.R.. Measurement of thermal stress in Pd 2 Si film on Si(111) by absorption edge contour mapping[J]. Materials Letters,1986,4(2):61-64.
APA Chen H.,White G.E.,&Stock S.R..(1986).Measurement of thermal stress in Pd 2 Si film on Si(111) by absorption edge contour mapping.Materials Letters,4(2),61-64.
MLA Chen H.,et al."Measurement of thermal stress in Pd 2 Si film on Si(111) by absorption edge contour mapping".Materials Letters 4.2(1986):61-64.
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