UM
Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD
Lin C.H.; Yen B.M.; Chen H.; Wu T.B.; Kuo H.C.; Stillman G.E.
1998
Source PublicationMaterials Research Society Symposium - Proceedings
Volume493
Pages189-194
AbstractHighly textured PbZr Ti O (PZT) thin films with x = 0-0.6 were grown on LaNiO coated Si substrates at 600°C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.
URLView the original
Language英語
Fulltext Access
Document TypeConference paper
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Lin C.H.,Yen B.M.,Chen H.,et al. Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD[C],1998:189-194.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Lin C.H.]'s Articles
[Yen B.M.]'s Articles
[Chen H.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Lin C.H.]'s Articles
[Yen B.M.]'s Articles
[Chen H.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Lin C.H.]'s Articles
[Yen B.M.]'s Articles
[Chen H.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.