UM
Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD
Liu D.; Chen H.
1996
Source PublicationMaterials Letters
ISSN0167577X
Volume28Issue:1-3Pages:17-20
AbstractSingle perovskite phase Pb(ScTa)O (PST) thin films have been grown using an one-stage MOCVD method. The processing temperature was 600°C. The film structure as a function of Pb/(Sc + Ta) flow ratio was determined using X-ray diffraction (XRD) and scanning electron microscopy (SEM).
KeywordFerroelectric Imaging Lead scandium tantalate Low temperature deposition MOCVD Perovskite Pyroelectric Silicon substrates Thin films
DOI10.1016/0167-577X(96)00029-8
URLView the original
Language英語
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Cited Times [WOS]:21   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Liu D.,Chen H.. Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD[J]. Materials Letters,1996,28(1-3):17-20.
APA Liu D.,&Chen H..(1996).Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD.Materials Letters,28(1-3),17-20.
MLA Liu D.,et al."Low-temperature preparation of perovskite Pb(Sc0.5Ta0.5) O3 thin films using MOCVD".Materials Letters 28.1-3(1996):17-20.
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