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Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy
Kuo H.C.; Thomas S.; Norton T.U.; Moser B.G.; Stillman G.E.; Lin C.H.; Chen H.
1998-05-01
Source PublicationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN10711023
Volume16Issue:3Pages:1377-1380
AbstractWe present in this article a comparison of 1.3 μm InAsP/InGaP strain-compensated multiple quantum well (SC-MQW) modulators with and without an InP insertion layer. Material quality was evaluated by cross-sectional transmission electron microscope analysis, x-ray rocking curves with dynamical simulations, and photoluminescence measurements. Devices were fabricated and device performance criteria such as contrast ratio (C.R.) and uniformity were also compared. It was found that higher C.R. and highly uniform InAsP/InGaP SC-MQW modulators can be achieved by inserting thin InP layers at the heterointerfaces between InAsP and InGaP. © 1998 American Vacuum Society.
URLView the original
Language英語
Fulltext Access
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Kuo H.C.,Thomas S.,Norton T.U.,et al. Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,1998,16(3):1377-1380.
APA Kuo H.C..,Thomas S..,Norton T.U..,Moser B.G..,Stillman G.E..,...&Chen H..(1998).Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,16(3),1377-1380.
MLA Kuo H.C.,et al."Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy".Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16.3(1998):1377-1380.
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