UM
Domain structure and stability of MOCVD-derived ferroelectric thin films
Lin C.H.; Yen B.M.; Batzer R.S.; Chen H.
1999
Source PublicationFerroelectrics
ISSN00150193
Volume221Issue:1-4Pages:237-244
AbstractFerroelectric thin film have recieved much attention in recent years because of their useful ferroelectric and dielectric properties to the device industry. In this article, we will address the relationship between the microstructure and the corresponding dielectric properties of PT and PZT ferroelectric thin film grown by Metal-Organic Chemical Vapor Deposition (MOCVD). The formation of domains in the textured polycrystalline thin films and single crystalline thin films were studied using TEM micrographs, X-ray diffraction and AFM. Substrate materials included single crystalline MgO, LaAlO and highly textured LaNiO coated Si substrate. The domain stability is also addressed as a result of initial cooling after deposition, and of subsequent thermal cycling after initial cooling. The stability of electrical properties after repeated cycles of operation (i. e. fatigue behavior) are also discussed.
KeywordDomain Ferroelectrics MOCVD Rhombohedral Tetragonal
DOI10.1080/00150199908016460
URLView the original
Language英語
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Cited Times [WOS]:3   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
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GB/T 7714
Lin C.H.,Yen B.M.,Batzer R.S.,et al. Domain structure and stability of MOCVD-derived ferroelectric thin films[J]. Ferroelectrics,1999,221(1-4):237-244.
APA Lin C.H.,Yen B.M.,Batzer R.S.,&Chen H..(1999).Domain structure and stability of MOCVD-derived ferroelectric thin films.Ferroelectrics,221(1-4),237-244.
MLA Lin C.H.,et al."Domain structure and stability of MOCVD-derived ferroelectric thin films".Ferroelectrics 221.1-4(1999):237-244.
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