UM
Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD
Lin C.H.; Kuo H.C.; Stillman G.E.; Chen H.
1999
Source PublicationMaterials Research Society Symposium - Proceedings
ISSN02729172
Volume541Pages:679-684
AbstractHighly (100) textured pseudo-cubic Pb(ScTa)TiO (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO (LNO) electrode buffered Si substrates at 650°C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated. Furthermore, the pyroelectric properties of these thin films were estimated.
URLView the original
Language英語
全文获取链接
Document TypeJournal article
专题University of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
推荐引用方式
GB/T 7714
Lin C.H.,Kuo H.C.,Stillman G.E.,et al. Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD[J]. Materials Research Society Symposium - Proceedings,1999,541:679-684.
APA Lin C.H.,Kuo H.C.,Stillman G.E.,&Chen H..(1999).Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD.Materials Research Society Symposium - Proceedings,541,679-684.
MLA Lin C.H.,et al."Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD".Materials Research Society Symposium - Proceedings 541(1999):679-684.
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
Google Scholar
中相似的文章 Google Scholar
[Lin C.H.]的文章
[Kuo H.C.]的文章
[Stillman G.E.]的文章
Baidu academic
中相似的文章 Baidu academic
[Lin C.H.]的文章
[Kuo H.C.]的文章
[Stillman G.E.]的文章
Bing Scholar
中相似的文章 Bing Scholar
[Lin C.H.]的文章
[Kuo H.C.]的文章
[Stillman G.E.]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。