UM
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm
Sengupta D.K.1; Jackson S.L.1; Curtis A.P.1; Fang W.1; Malin J.I.1; Horton T.U.1; Hartman Q.1; Kuo H.C.1; Thomas S.1; Miller J.1; Hsieh K.C.1; Adesida I.1; Chuang S.L.1; Feng M.1; Stillman G.E.1; Chang Y.C.1; Wu W.1; Tucker J.1; Chen H.1; Gibson J.M.1; Mazumder J.1; Li L.2; Liu H.C.2
1997
Source PublicationJournal of Electronic Materials
ISSN03615235
Volume26Issue:12Pages:1376-1381
AbstractWe present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.
KeywordGas source molecular beam epitaxy (GSMBE) InP/inGaAs Quantum-well infrared photodectors (QWIPs)
DOI10.1007/s11664-997-0054-3
URLView the original
Language英語
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被引频次[WOS]:7   [WOS记录]     [WOS相关记录]
Document TypeJournal article
专题University of Macau
Affiliation1.University of Illinois at Urbana-Champaign
2.National Research Council Canada
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Sengupta D.K.,Jackson S.L.,Curtis A.P.,et al. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials,1997,26(12):1376-1381.
APA Sengupta D.K..,Jackson S.L..,Curtis A.P..,Fang W..,Malin J.I..,...&Liu H.C..(1997).Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm.Journal of Electronic Materials,26(12),1376-1381.
MLA Sengupta D.K.,et al."Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm".Journal of Electronic Materials 26.12(1997):1376-1381.
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