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Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors
Sengupta D.K.1; Fang W.1; Malin J.I.1; Curtis A.P.1; Horton T.1; Kuo H.C.1; Turnbull D.1; Lin C.H.1; Li J.1; Hsieh K.C.1; Chuang S.L.1; Adesida I.1; Feng M.1; Bishop S.G.1; Stillman G.E.1; Gibson J.M.1; Chen H.1; Mazumder J.1; Liu H.C.2
1997
Source PublicationJournal of Electronic Materials
ISSN03615235
Volume26Issue:1Pages:43-51
AbstractThe effect of rapid thermal annealing (RTA) on important detector characteristics such as dark current, absolute response, noise, and detectivity is investigated for quantum-well infrared photodetectors (QWIP) operating in the 8-12 μm wavelength regime. A comprehensive set of experiments is conducted on QWIPs fabricated from both as-grown and annealed multiple-quantum-well structures. RTA is done at an anneal temperature of 850°C for 30 s using an SiO encapsulant. In general, a decrease in performance is observed for RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in a factor of four decrease in quantum efficiency. In addition, a degraded noise performance results in a detectivity which is five times lower than that of QWIPs using asgrown structures. Theoretical calculations of the absorption coefficient spectrum are in excellent agreement with the experimental data.
KeywordDark current characteristics Multiple quantum well infrared photodectors (QWIPs) Quantum efficiency Rapid thermal annealing (RTA) Red shift
DOI10.1007/s11664-997-0132-6
URLView the original
Language英語
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Cited Times [WOS]:2   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Illinois at Urbana-Champaign
2.National Research Council Canada
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GB/T 7714
Sengupta D.K.,Fang W.,Malin J.I.,et al. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials,1997,26(1):43-51.
APA Sengupta D.K..,Fang W..,Malin J.I..,Curtis A.P..,Horton T..,...&Liu H.C..(1997).Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors.Journal of Electronic Materials,26(1),43-51.
MLA Sengupta D.K.,et al."Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors".Journal of Electronic Materials 26.1(1997):43-51.
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