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Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy
Kuo H.C.1; Kuo J.M.1; Wang Y.C.1; Lin C.H.1; Chen H.1; Stillman G.E.1
1997
Source PublicationJournal of Electronic Materials
ISSN03615235
Volume26Issue:8Pages:944-948
AbstractWe report the determination of band offset ratios, using photoluminescence excitation measurements, for GaInP/GaAs and AlInP/GaAs quantum wells grown by gas-source molecular beam epitaxy. To reduce the uncertainty related to the intermixing layer at heterointerfaces, the residual group-V source evacuation time was optimized for abrupt GaInP/GaAs (AlInP/GaAs) interfaces. Based upon thickness and composition values determined by double-crystal x-ray diffraction simulation and cross-sectional transmission electron microscopy, the transition energies of GaInP/GaAs and AlInP/GaAs quantum wells were calculated using a three-band Kane model with varying band-offset ratios. The best fit of measured data to calculated transition energies suggests that the valence-band offset ratio (Γ band discontinuity) was 0.63 ± 0.05 for GaInP/GaAs and 0.54 ± 0.05 for AlInP/GaAs heterostructures. This result showed good agreement with photoluminescence data, indicating that the value is independent of temperature.
KeywordAlInP/GaAs Band offset GaInP/GaAs Gas source molecular beam epitaxy (GSMBE) Photoluminescence (PL) Photoluminescence excitation (PLE) Three-band Kane
DOI10.1007/s11664-997-0279-1
URLView the original
Language英語
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Cited Times [WOS]:13   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Illinois at Urbana-Champaign
2.Nokia Bell Labs
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GB/T 7714
Kuo H.C.,Kuo J.M.,Wang Y.C.,et al. Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy[J]. Journal of Electronic Materials,1997,26(8):944-948.
APA Kuo H.C.,Kuo J.M.,Wang Y.C.,Lin C.H.,Chen H.,&Stillman G.E..(1997).Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy.Journal of Electronic Materials,26(8),944-948.
MLA Kuo H.C.,et al."Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy".Journal of Electronic Materials 26.8(1997):944-948.
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