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Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si
Lin C.H.2; Lee S.W.2; Chen H.2; Wu T.B.1
1999-10-18
Source PublicationApplied Physics Letters
ISSN00036951
Volume75Issue:16Pages:2485-2487
AbstractHighly (100) textured Pb(ScTa)TiO (x=0-0.3) thin films were grown on LaNiO/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685°C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroelectrics was noticed. As Ti content increased from 0% to 30%, the phase transition temperature (T) gradually shifted from -10 to 120°C with the dielectric constant at T increased from 1397 to 1992 (1 kHz). Loss tangent values are generally below 0.025. © 1999 American Institute of Physics.
DOI10.1063/1.125056
URLView the original
Language英語
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Cited Times [WOS]:9   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.National Tsing Hua University
2.University of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Lin C.H.,Lee S.W.,Chen H.,et al. Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si[J]. Applied Physics Letters,1999,75(16):2485-2487.
APA Lin C.H.,Lee S.W.,Chen H.,&Wu T.B..(1999).Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si.Applied Physics Letters,75(16),2485-2487.
MLA Lin C.H.,et al."Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si".Applied Physics Letters 75.16(1999):2485-2487.
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