UM
Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy
Kuo H.C.; Thomas S.; Curtis A.P.; Stillman G.E.; Lin C.H.; Chen H.
1997
Source PublicationMaterials Research Society Symposium - Proceedings
Volume450
Pages153-158
AbstractInAs P /InP (10 period 50/100 angstroms with x = 0.25-0.79) pseudomorphically strained multiple quantum wells (SMQWs) were grown by gas source molecular beam expitaxy (GSMBE) at 470 °C and characterized by cross-sectional transmission electron microscope (XTEM), double crystal x-ray diffraction (DCXRD), and optical spectroscopy. The structural analysis demonstrates that excellent control of the sharp interface and limited As-P interdiffusion can be achieved by GSMBE growth. XTEM images of these SMQWs display no misfit dislocations, and DCXRD scans reveal high order superlattice satellite peaks. Photoluminescence (PL) and transmission measurements were performed for all SMQWs to evaluate crystal quality. Only slight degradation in luminescence was observed as the As composition increased. Based on the three-band Kane model which includes the lattice strain, the transition energies of SMQWs were calculated using the conduction-band offset (Q = ΔE /ΔE ) as an adjustable parameter. The best fit of measured and calculated interband transition energies suggests that Q is independent of As composition and is 0.70±0.05. Finally, a growth kinetics model based on the Langmuir equation was derived to realize the As/P incorporation ratio in the InAsP materials. Theoretical results show good agreement with experimental data.
URLView the original
Language英語
Fulltext Access
Document TypeConference paper
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Kuo H.C.,Thomas S.,Curtis A.P.,et al. Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy[C],1997:153-158.
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