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H 2 sensing behavior of MOCVD-derived SnO 2 thin films
Lee S.W.2; Tsai P.P.1; Chen H.2
1997-06-30
Source PublicationSensors and Actuators, B: Chemical
ISSN09254005
Volume41Issue:1-3Pages:55-61
AbstractThin film fabrication techniques have opened a new era for many electronic devices. However, in the field of gas sensors, thin films have not reached their fully developed stages. In this study, the metal organic chemical vapor deposition (MOCVD) technique has been utilized for the deposition of tin oxide (SnO ) thin films on polished alumina (Al O ) substrates. For the purpose of the microstructure characterization of the films, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES) have been applied. The films were subjected to sensing tests in both dry air and 1% H , balanced by dry air, environment in order to investigate their sensing behavior in relation with the microstructure. The films exhibited faceted grains with rough surface morphology and were composed of columnar grains with pore channels along the grains. The maximum sensitivity occurred between 450 and 500°C with a magnitude of approximately 20. © 1997 Elsevier Science S.A.
KeywordGas sensor MOCVD SnO 2 Thin film
DOI10.1016/S0925-4005(97)80277-8
URLView the original
Language英語
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被引频次[WOS]:21   [WOS记录]     [WOS相关记录]
Document TypeJournal article
专题University of Macau
Affiliation1.Industrial Technology Research Institute of Taiwan
2.University of Illinois at Urbana-Champaign
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Lee S.W.,Tsai P.P.,Chen H.. H 2 sensing behavior of MOCVD-derived SnO 2 thin films[J]. Sensors and Actuators, B: Chemical,1997,41(1-3):55-61.
APA Lee S.W.,Tsai P.P.,&Chen H..(1997).H 2 sensing behavior of MOCVD-derived SnO 2 thin films.Sensors and Actuators, B: Chemical,41(1-3),55-61.
MLA Lee S.W.,et al."H 2 sensing behavior of MOCVD-derived SnO 2 thin films".Sensors and Actuators, B: Chemical 41.1-3(1997):55-61.
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