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Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition
Lin C.H.1; Yen B.M.1; Kuo H.C.1; Chen H.1; Wu T.B.2; Stillman G.E.1
2000
Source PublicationJournal of Materials Research
ISSN08842914
Volume15Issue:1Pages:115-124
AbstractThin films of highly (100) textured fine-grain (lateral grain size ≃ 0.1 to 0.15 μm) PbZr Ti O (PZT) (x = 0 to 0.7) were grown on conductive perovskite LaNiO -buffered platinized Si substrates by metalorganic chemical vapor deposition. Domain configuration and crystalline orientation were studied using x-ray diffraction and transmission electron microscopy. The predominant domain boundaries of Ti-rich tetragonal-phase PZT and Zr-rich rhombohedral-phase PZT were found to be on the (110) planes and (100) planes, respectively. The equilibrium domain widths were observed and estimated numerically on the basis of transformation strain, grain size, and domain boundary energy. The peak value of the dielectric constant was 790 near the morphotropic boundary. Hysteresis behavior of these PZT thin films was demonstrated. A decrease in coercive field with the increment of Zr content was found; this variation was attributed to domain density and the multiplicity of polarization axes. Furthermore, the low leakage current (J ≤ 5 × 10 A/cm at V = 4 V) was observed for all samples, and the involvement of several possible conduction mechanisms was suggested.
DOI10.1557/JMR.2000.0020
URLView the original
Language英語
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Cited Times [WOS]:8   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Illinois at Urbana-Champaign
2.National Tsing Hua University
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GB/T 7714
Lin C.H.,Yen B.M.,Kuo H.C.,et al. Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition[J]. Journal of Materials Research,2000,15(1):115-124.
APA Lin C.H.,Yen B.M.,Kuo H.C.,Chen H.,Wu T.B.,&Stillman G.E..(2000).Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition.Journal of Materials Research,15(1),115-124.
MLA Lin C.H.,et al."Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition".Journal of Materials Research 15.1(2000):115-124.
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