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GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates
Sengupta D.K.4; Fang W.4; Malin J.I.4; Li J.4; Horton T.4; Curtis A.P.4; Hsieh K.C.4; Chuang S.L.4; Chen H.4; Feng M.4; Stillman G.E.4; Li L.2; Liu H.C.2; Bandara K.M.S.V.3; Gunapala S.D.3; Wang W.I.1
1997-07-07
Source PublicationApplied Physics Letters
ISSN00036951
Volume71Issue:1Pages:78-80
AbstractIn this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP's) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response. © 1997 American Institute of Physics.
DOI10.1063/1.119473
URLView the original
Language英語
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Cited Times [WOS]:10   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Columbia University in the City of New York
2.National Research Council Canada
3.Jet Propulsion Laboratory, California Institute of Technology
4.University of Illinois at Urbana-Champaign
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Sengupta D.K.,Fang W.,Malin J.I.,et al. GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates[J]. Applied Physics Letters,1997,71(1):78-80.
APA Sengupta D.K..,Fang W..,Malin J.I..,Li J..,Horton T..,...&Wang W.I..(1997).GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates.Applied Physics Letters,71(1),78-80.
MLA Sengupta D.K.,et al."GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates".Applied Physics Letters 71.1(1997):78-80.
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