UM
Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si
Lin C.H.; Friddle P.A.; Ma C.H.; Daga A.; Chen H.
2001-08-01
Source PublicationJournal of Applied Physics
ISSN00218979
Volume90Issue:3Pages:1509-1515
AbstractPb(Zr, Ti)O (PZT) thin films with (100) preferred orientation were prepared using metalorganic chemical vapor deposition on LaNiO (LNO) buffered platinized Si with thickness varying from 25-100 nm. The dependence of electrical properties of PZT films on thickness was studied using several techniques, including polarization-electric field (P-E), temperature variable current-voltage (I-V), and capacitance-voltage (C-V) measurements. Because of the formation of Schottky barriers at ferroelectric/electrode interfaces, built-in electric fields are present. A progressive increment in carrier concentration and interfacial built-in electric field versus reducing PZT film thickness was observed, which is believed to be a dominant factor controlling the measured dielectric/ferroelectric properties. The higher built-in electric field in thinner PZT films would pin the dipoles at the interfacial region and retard the response of dipoles to the external electric field. © 2001 American Institute of Physics.
DOI10.1063/1.1383262
URLView the original
Language英語
Fulltext Access
Citation statistics
Cited Times [WOS]:55   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Lin C.H.,Friddle P.A.,Ma C.H.,et al. Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si[J]. Journal of Applied Physics,2001,90(3):1509-1515.
APA Lin C.H.,Friddle P.A.,Ma C.H.,Daga A.,&Chen H..(2001).Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si.Journal of Applied Physics,90(3),1509-1515.
MLA Lin C.H.,et al."Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si".Journal of Applied Physics 90.3(2001):1509-1515.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Lin C.H.]'s Articles
[Friddle P.A.]'s Articles
[Ma C.H.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Lin C.H.]'s Articles
[Friddle P.A.]'s Articles
[Ma C.H.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Lin C.H.]'s Articles
[Friddle P.A.]'s Articles
[Ma C.H.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.